FGA15S125P Fairchild Semiconductor, FGA15S125P Datasheet
FGA15S125P
Manufacturer Part Number
FGA15S125P
Description
IGBT Transistors FORECAST FG
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA15S125P.pdf
(8 pages)
Specifications of FGA15S125P
Rohs
yes
Collector- Emitter Voltage Vceo Max
1250 V
Collector-emitter Saturation Voltage
2.72 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current At 25 C
30 A
Gate-emitter Leakage Current
500 nA
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-3PN
Continuous Collector Current Ic Max
15 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGA15S125P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
θ
θ
±
/
/
Related parts for FGA15S125P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FGA15S125P Summary of contents
Page 1
θ θ ± ...
Page 2
Ω Ω ...
Page 3
...
Page 4
Ω Ω Ω Ω µ µ µ µ µ µ µ µ Ω Ω Ω Ω ...
Page 5
Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω ...
Page 6
...
Page 7
...
Page 8
CROSSVOLT max µ ...