SIHB24N65E-GE3 Vishay/Siliconix, SIHB24N65E-GE3 Datasheet

SIHB24N65E-GE3

Manufacturer Part Number

SIHB24N65E-GE3

Description

MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS

Manufacturer

Vishay/Siliconix

Datasheet

1.SIHB24N65E-GE3.pdf (9 pages)

Specifications of SIHB24N65E-GE3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

650 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

24 A

Resistance Drain-source Rds (on)

145 mOhms at 10 V

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

D2PAK (TO-263)

Fall Time

69 ns

Forward Transconductance Gfs (max / Min)

7.1 S

Gate Charge Qg

81 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

250 W

Rise Time

84 ns

Typical Turn-off Delay Time

70 ns

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

SIHB24N65E-GE3

Quantity:

70 000

Current page: 1 of 9
Download datasheet (204Kb)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

c. 1.6 mm from case.

d. I

S12-1716-Rev. E, 16-Jul-12

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

Continuous Drain Current (T

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt

Soldering Recommendations (Peak Temperature)

DS(on)

max. (nC)

(nC)

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

(V) at T

(nC)

 I

G D

= 50 V, starting T

max. at 25 °C ()

, dI/dt = 100 A/μs, starting T

PAK (TO-263)

max.

www.vishay.com

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 25 °C, L = 28.2 mH, R

= 150 °C)

= 10 V

= 25 °C.

N-Channel MOSFET

E Series Power MOSFET

Single

For technical questions, contact:

700

122

= 25 , I

= 25 °C, unless otherwise noted)

0.145

at 10 V

= 6 A.

for 10 s

= 125 °C

SiHB24N65E-GE3

= 100 °C

= 25 °C

FEATURES

• Low Figure-of-Merit (FOM) R

• Low Input Capacitance (C

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q

• Avalanche Energy Rated (UIS)

• Material categorization: For definitions please see

APPLICATIONS

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

• Industrial

PAK (TO-263)

www.vishay.com/doc?99912

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

- Renewable Energy

- Solar (PV Inverters)

hvm@vishay.com

SYMBOL

www.vishay.com/doc?91000

dV/dt

, T

stg

iss

- 55 to + 150

)

LIMIT

300

± 20

650

508

250

x Q

Vishay Siliconix

SiHB24N65E

Document Number: 91477

UNIT

W/°C

V/ns

°C

Related parts for SIHB24N65E-GE3

SIHB24N65E-GE3 Summary of contents

Page 1

... Power Factor Correction Power Supplies (PFC) • Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting S • Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers - Renewable Energy - Solar (PV Inverters PAK (TO-263) SiHB24N65E-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 100 ° 125 ° ...

Page 2

... dI/dt = 100 A/μ RRM while V is rising from oss DS while V is rising from oss DS 2 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix MAX. UNIT 62 °C/W 0.5 MIN. TYP. MAX. 650 - - = 250 μ ± ...

Page 3

... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage 3 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix 100 120 140 160 T , Junction Temperature (° iss MHz ...

Page 4

... Fig Temperature vs. Drain-to-Source Voltage 0.01 Pulse Time (s) 4 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix 50 75 100 125 150 T , Case Temperature (° 100 120 140 160 T , Junction Temperature (° ...

Page 5

... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Fig Basic Gate Charge Waveform For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix Charge Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. ...

Page 6

... Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix + + Document Number: 91477 ...

Page 7

TO-263AB (HIGH VOLTAGE) (Datum Lead tip MILLIMETERS DIM. MIN. MAX. A 4.06 4.83 ...

Page 8

RECOMMENDED MINIMUM PADS FOR D Return to Index Document Number: 73397 11-Apr-05 2 PAK: 3-Lead 0.420 (10.668) 0.135 (3.429) 0.200 (5.080) Recommended Minimum Pads Dimensions in Inches/(mm) AN826 Vishay Siliconix 0.145 (3.683) 0.050 (1.257) www.vishay.com 1 ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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