SiHP30N60E-E3 Vishay/Siliconix, SiHP30N60E-E3 Datasheet - Page 7

• Manufacturer Part Number: SiHP30N60E-E3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SiHP30N60E-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 85 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 W

Revison: 08-Oct-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
www.vishay.com
1
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
e(1)
E
2
e
3
b
M
b(1)
*
Ø P
For technical questions, contact:
C
A
J(1)
F
TO-220AB
1
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
• Xi’an and Mingxin actual photo
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
DIM.
[e-mail]
H(1)
b(1)
e(1)
J(1)
L(1)
Ø P
A
D
E
Q
b
c
e
F
L
www.vishay.com/doc?91000
14.85
10.04
13.35
MIN.
4.25
0.69
1.20
0.36
2.41
4.88
1.14
6.09
3.32
3.54
2.60
2.41
MILLIMETERS
Package Information
MAX.
15.49
10.51
14.02
4.65
1.01
1.73
0.61
2.67
5.28
1.40
6.48
2.92
3.82
3.94
3.00
Vishay Siliconix
Document Number: 71195
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
MIN.
INCHES
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118