FDP027N08B_F102 Fairchild Semiconductor, FDP027N08B_F102 Datasheet

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FDP027N08B_F102

Manufacturer Part Number
FDP027N08B_F102
Description
MOSFET N-Channel PwrTrench 80V 223A 2.7mOhm
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDP027N08B_F102

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
80 V
Continuous Drain Current
223 A
Resistance Drain-source Rds (on)
2.21 mOhms
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Minimum Operating Temperature
- 55 C
Power Dissipation
246 W
Factory Pack Quantity
400
©2011 Fairchild Semiconductor Corporation
FDP027N08B_F102 Rev. C3
MOSFET Maximum Ratings
Thermal Characteristics
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
FDP027N08B_F102
N-Channel PowerTrench
80 V, 223 A, 2.7 mΩ
Features
• R
• Low FOM R
• Low Reverse Recovery Charge, Q
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
J
L
DSS
GSS
AS
D
θJC
θJA
, T
Symbol
Symbol
DS(on)
STG
= 2.21 mΩ ( Typ.) @ V
DS(on)
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Q
G
G
D
S
GS
= 10 V, I
rr
= 112 nC
T
D
C
= 25
= 100 A
TO-220
®
Parameter
Parameter
-Continuous (T
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
o
C unless otherwise noted
MOSFET
C
= 25
o
C)
C
C
C
1
= 25
= 100
= 25
o
Description
This
Semiconductor
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
C
o
o
C, Silicon Limited)
C, Package Limited)
o
C, Silicon Limited)
N-Channel
®
G
’s advanced PowerTrench
(Note 1)
(Note 2)
(Note 3)
MOSFET
D
S
FDP027N08B_F102
FDP027N08B_F102
is
-55 to +175
produced
223*
158*
1.64
±20
120
892
917
246
300
0.61
62.5
6.0
80
®
March 2013
process that has
using
www.fairchildsemi.com
Fairchild
W/
o
V/ns
Unit
Unit
mJ
o
o
C/W
W
V
V
A
A
C
C
o
C

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FDP027N08B_F102 Summary of contents

Page 1

... Package limitation current is 120A Thermal Characteristics Symbol R Thermal Resistance, Junction to Case, Max θJC R Thermal Resistance, Junction to Ambient, Max θJA ©2011 Fairchild Semiconductor Corporation FDP027N08B_F102 Rev. C3 ® MOSFET Description = 100 A This N-Channel D Semiconductor been tailored to minimize the on-state resistance while maintain- ing superior switching performance ...

Page 2

... Starting T = 25° ≤ 100A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics ©2011 Fairchild Semiconductor Corporation FDP027N08B_F102 Rev. C3 Package TO-220 F102: Trimmed Leads unless otherwise noted C Test Conditions I = 250μ ...

Page 3

... 100 1MHz ( C iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS ©2011 Fairchild Semiconductor Corporation FDP027N08B_F102 Rev. C3 Figure 2. Transfer Characteristics 500 100 V = 15. 10.0V 8.0V 7.0V 6.5V 6.0V 5. 2.5 Figure 4. Body Diode Forward Voltage 500 ...

Page 4

... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Eoss vs. Drain to Source Voltage Switching Capability Drain to Source Voltage DS ©2011 Fairchild Semiconductor Corporation FDP027N08B_F102 Rev. C3 (Continued) Figure 8. On-Resistance Variation 2.0 1.5 1.0 *Notes μ 250 A D 0.5 -100 80 120 160 200 o [ ...

Page 5

... Typical Performance Characteristics 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.005 -5 10 ©2011 Fairchild Semiconductor Corporation FDP027N08B_F102 Rev. C3 (Continued) Figure 13. Transient Thermal Response Curve - Rectangular Pulse Duration [sec *Notes (t) = 0.61 C/W Max. θ Duty Factor ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP027N08B_F102 Rev. C3 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2011 Fairchild Semiconductor Corporation FDP027N08B_F102 Rev DUT DUT Driver Driver Same Type ...

Page 8

... Mechanical Dimensions ©2011 Fairchild Semiconductor Corporation FDP027N08B_F102 Rev. C3 TO-220 (F102: Trimmed Leads) 8 www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDP027N08B_F102 Rev. C3 ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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