SiHP25N40D-GE3 Vishay/Siliconix, SiHP25N40D-GE3 Datasheet - Page 4
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SiHP25N40D-GE3
Manufacturer Part Number
SiHP25N40D-GE3
Description
MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHP25N40D-GE3.pdf
(8 pages)
Specifications of SiHP25N40D-GE3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
25 A
Resistance Drain-source Rds (on)
170 mOhms at 10 V
Configuration
Single
Mounting Style
Through Hole
Package / Case
TO-220AB-3
Fall Time
37 ns
Forward Transconductance Gfs (max / Min)
7.4 S
Gate Charge Qg
44 nC
Power Dissipation
278 W
Rise Time
57 ns
S12-0625-Rev. B, 26-Mar-12
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1000
0.01
100
100
0.1
0.1
10
10
1
1
0.2
1
* V
Fig. 8 - Maximum Safe Operating Area
Operation in this Area
Limited by R
T
T
Single Pulse
GS
C
J
0.01
= 150 °C
0.1
= 25 °C
0.4
> minimum V
www.vishay.com
Limited by R
1
0.0001
V
V
SD
T
DS
J
0.05
0.1
Duty Cycle = 0.5
0.2
Single Pulse
, Source-Drain Voltage (V)
, Drain-to-Source Voltage (V)
= 150 °C
0.6
DS(on)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
GS
DS(on)
0.8
at which R
*
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
BVDSS Limited
0.02
T
1
J
I
DM
= 25 °C
100
V
= Limited
DS(on)
GS
1.2
= 0 V
0.001
For technical questions, contact:
is specified
1.4
100 μs
1 ms
10 ms
1000
1.6
Pulse Time (s)
4
0.01
hvm@vishay.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
500
475
450
425
400
375
350
30
24
18
12
6
0
- 60
25
www.vishay.com/doc?91000
- 40 - 20
T
50
J
0.1
T
, Junction Temperature (°C)
J
, Case Temperature (°C)
0
20 40 60 80 100 120 140
75
100
Vishay Siliconix
SiHP25N40D
Document Number: 91483
125
1
150
160