SiHF30N60E-E3 Vishay/Siliconix, SiHF30N60E-E3 Datasheet - Page 4

• Manufacturer Part Number: SiHF30N60E-E3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SiHF30N60E-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220FP-3
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 85 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 37 W

S13-0059-Rev. F, 21-Jan-13
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
10 000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
0.001
1000
1000
100
0.01
10
100
1
0.1
Fig. 7 - Typical Source-Drain Diode Forward Voltage
24
20
16
12
10
8
4
0
1
0.0
0
0
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0.2
I
D
C
25
100
= 15 A
iss
T
J
V
V
0.4
C
= 150 °C
SD
DS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
rss
Q
- Source-to-Drain Voltage (V)
g
- Drain-to-Source Voltage (V)
50
200
- Total Gate Charge (nC)
C
0.6
oss
V
C
C
C
T
GS
75
J
0.8
iss
rss
oss
300
= 25 °C
= 0 V, f = 1 MHz
= C
= C
= C
V
DS
gs
gd
ds
1.0
= 120 V
+ C
100
+ C
400
For technical questions, contact:
gd
gd
1.2
x C
V
DS
V
DS
125
ds
= 300 V
500
= 480 V
shorted
1.4
150
1.6
600
4
[e-mail]
1000
100
30.0
25.0
20.0
15.0
10.0
0.1
10
5.0
1
0
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
25
Fig. 10 - Temperature vs. Drain-to-Source Voltage
* V
Operation in this Area
Limited by R
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T
T
Single Pulse
Fig. 8 - Maximum Safe Operating Area
C
J
GS
Limited by R
= 150 °C
= 25 °C
> minimum V
V
50
DS
DS(on)
, Drain-to-Source Voltage (V)
D (on)
10
T
T
C
J
*
GS
- Temperature (°C)
- Temperature (°C)
75
I
DM
at which R
= Limited
100
Vishay Siliconix
Document Number: 91454
BVDSS Limited
SiHF30N60E
100
DS(on)
is specified
125
10 ms
100 μs
1000
1 ms
150