GP10-4003E-E3/66 Vishay Semiconductors, GP10-4003E-E3/66 Datasheet
GP10-4003E-E3/66
Specifications of GP10-4003E-E3/66
Related parts for GP10-4003E-E3/66
GP10-4003E-E3/66 Summary of contents
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... SYMBOL RRM I F(AV FSM I R(AV ° 175 J STG DiodesEurope@vishay.com This datasheet is subject to change without notice. GP10A thru GP10Y structure for high reliability UNIT 50 to 1600 (fig 150 www.vishay.com www.vishay.com/doc?91000 μ ...
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... GP10A thru GP10Y Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 1.0 A forward voltage Maximum DC reverse °C A current at rated DC blocking voltage T = 125 °C A Typical reverse recovery time Typical junction 4 MHz capacitance THERMAL CHARACTERISTICS (T PARAMETER ...
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... This datasheet is subject to change without notice. GP10A thru GP10Y GP10A................. 50 V GP10B............... 100 V GP10D.............. 200 V GP10G.............. 400 V GP10J............... 600 V GP10K............... 800 V GP10M.............1000 V GP10N............. 1100 V GP10Q............. 1200 V GP10T..............1300 V GP10V............. 1400 V GP10W............ 1500 V GP10Y............. 1600 V RRM ° 1.0 MHz sig p-p ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...