SIHF6N40D-E3 Vishay/Siliconix, SIHF6N40D-E3 Datasheet

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SIHF6N40D-E3

Manufacturer Part Number
SIHF6N40D-E3
Description
MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SIHF6N40D-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
5 V
Continuous Drain Current
6 A
Resistance Drain-source Rds (on)
1 Ohms at 10 V
Configuration
Single
Mounting Style
Through Hole
Package / Case
TO-220FP-3
Power Dissipation
30 W
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
c. 1.6 mm from case.
d. I
e. Limited by maximum junction temperature.
S12-0687-Rev. A, 02-Apr-12
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (T
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
Soldering Recommendations (Peak Temperature)
TO-220 FULLPAK
DS
DS(on)
g
gs
gd
SD
DD
max. (nC)
(nC)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
(V) at T
(nC)
 I
= 50 V, starting T
D
max. at 25 °C ()
, starting T
J
max.
www.vishay.com
J
= 25 °C.
d
a
G
J
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 25 °C, L = 2.3 mH, R
D
J
S
= 150 °C)
b
V
GS
= 10 V
G
e
N-Channel MOSFET
D Series Power MOSFET
Single
450
18
3
4
g
= 25 , I
C
D
S
= 25 °C, unless otherwise noted)
V
1.0
GS
AS
at 10 V
= 9.5 A.
T
J
for 10 s
= 125 °C
T
1
T
C
C
TO-220 FULLPAK
SiHF6N40D-E3
= 100 °C
= 25 °C
FEATURES
• Optimal Design
• Optimal Efficiency and Operation
• Compliant to RoHS Directive 2011/65/EU
Note
APPLICATIONS
• Consumer Electronics
• Server and Telecom Power Supplies
• Industrial
• Battery Chargers
*
Pb containing terminations are not RoHS compliant, exemptions
may apply
- Low Area Specific On-Resistance
- Low Input Capacitance (C
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R
- Fast Switching
- Displays (LCD or Plasma TV)
- SMPS
- Welding
- Induction Heating
- Motor Drives
SYMBOL
www.vishay.com/doc?91000
T
dV/dt
J
V
V
E
I
, T
P
DM
I
GS
DS
D
AS
D
stg
- 55 to + 150
iss
LIMIT
300
± 30
0.24
0.48
400
104
30
13
30
24
)
6
4
on
Vishay Siliconix
c
Document Number: 91501
x Q
SiHF6N40D
g
UNIT
W/°C
V/ns
mJ
°C
°C
W
V
A

Related parts for SIHF6N40D-E3

SIHF6N40D-E3 Summary of contents

Page 1

... APPLICATIONS S • Consumer Electronics - Displays (LCD or Plasma TV) • Server and Telecom Power Supplies - SMPS • Industrial - Welding - Induction Heating - Motor Drives • Battery Chargers TO-220 FULLPAK SiHF6N40D- °C, unless otherwise noted) C SYMBOL ° 100 °C C ...

Page 2

... dI/dt = 100 A/μ RRM while V is rising from oss DS while V is rising from oss DS 2 www.vishay.com/doc?91000 SiHF6N40D Vishay Siliconix MAX. UNIT 65 °C/W 4.1 MIN. TYP. MAX. UNIT 400 - - V - 0.53 - V/° ...

Page 3

... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage 3 www.vishay.com/doc?91000 SiHF6N40D Vishay Siliconix 100 120 140 160 T , Junction Temperature (° MHz iss GS ...

Page 4

... Fig Temperature vs. Drain-to-Source Voltage 0.001 0.01 Pulse Time (s) 4 www.vishay.com/doc?91000 SiHF6N40D Vishay Siliconix 50 75 100 125 150 T , Case Temperature (° 100 120 140 160 T , Junction Temperature (° ...

Page 5

... Fig Basic Gate Charge Waveform Same type as D.U. Fig Gate Charge Test Circuit + www.vishay.com/doc?91000 SiHF6N40D Vishay Siliconix Charge Current regulator 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors ...

Page 6

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 www.vishay.com/doc?91000 SiHF6N40D Vishay Siliconix + + Document Number: 91501 ...

Page 7

TO-220 FULLPAK (HIGH VOLTAGE DIM. MIN. A 4.570 A1 2.570 A2 2.510 b 0.622 b2 1.229 b3 1.229 c 0.440 D 8.650 d1 15.88 d3 12.300 E 10.360 e L 13.200 L1 3.100 n 6.050 Ø P ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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