ZXMP4A57E6TA Diodes Inc. / Zetex, ZXMP4A57E6TA Datasheet - Page 6

• Manufacturer Part Number: ZXMP4A57E6TA
• Description: MOSFET MOSFET BVDSS 31V-40 SOT26,3K
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXMP4A57E6TA

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3.7 A
• Resistance Drain-source Rds (on): 80 mOhms at -10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-26
• Fall Time: 21 ns
• Gate Charge Qg: 7 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 3.3 ns
• Typical Turn-off Delay Time: 47 ns

Typical Characteristics - continued
Test Circuits
ZXMP4A57E6
Document Number DS35238 Rev. 1 - 2
Capacitance v Drain-Source Voltage
1000
800
600
400
200
0
V
G
0.1
-V
Q
GS
DS
Basic gate charge waveform
t
C
r
Switching time waveforms
ISS
t
(on)
- Drain - Source Voltage (V)
t
d(of )
C
OSS
1
Q
Q
G
GD
Charge
C
RSS
t
r
t
(on)
10
V
f = 1MHz
t
d(on)
GS
= 0V
www.diodes.com
90%
10%
V
V
6 of 8
DS
GS
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
Gate charge test circuit
Pulse width
Duty factor 0.1%
2
12V
R
G
4
Diodes Incorporated
Q - Charge (nC)
0.2 F
1 S
A Product Line of
V
regulator
6
GS
Current
50k
I
G
V
GS
8
R
D.U.T
Same as
D
10
D.U.T
V
I
V
D
DS
12
DS
ZXMP4A57E6
= -4A
= -20V
I
D
V
DS
14
V
© Diodes Incorporated
DD
16
March 2011