NTMFS4922NET1G ON Semiconductor, NTMFS4922NET1G Datasheet

NTMFS4922NET1G

Manufacturer Part Number

NTMFS4922NET1G

Description

MOSFET NFET S08FL 30V 147A 2MOH

Manufacturer

ON Semiconductor

Datasheet

1.NTMFS4922NET1G.pdf (7 pages)

Specifications of NTMFS4922NET1G

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

29.1 A

Resistance Drain-source Rds (on)

1.45 mOhms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SON-8

Fall Time

9.4 ns

Forward Transconductance Gfs (max / Min)

80 S

Gate Charge Qg

34 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

2.72 W

Rise Time

36.2 ns

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NTMFS4922NE

Power MOSFET

30 V, 147 A, Single N−Channel, SO−8 FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

May, 2012 − Rev. 1

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain Current

Current Limited by Package

Operating Junction and Storage Temperature

Source Current (Body Diode)

Drain to Source DV/DT

Single Pulse Drain−to−Source Avalanche

Energy T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Compliant

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

Dual Sided Cooling Capability

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

CPU Power Delivery, DC−DC Converters

qJA

qJC

= 37 A

(Note 1)

≤ 10 s (Note 1)

(Note 2)

(Note 1)

DS(on)

qJA

qJC

= 25°C, V

, L = 0.3 mH, R

≤ 10 s

to Minimize Conduction Losses

Parameter

= 24 V, V

Steady

State

= 25 W

= 25°C, t

= 25°C unless otherwise stated)

= 10 V,

= 100°C

=100°C

= 10 ms

= 25°C

Symbol

dV/d

Dmax

DSS

STG

−55 to

Value

69.44

162.5

+150

29.1

18.4

2.72

47.5

30.0

7.23

17.1

10.8

0.93

±20

147

442

100

260

Unit

V/ns

°C

†For information on tape and reel specifications,

NTMFS4922NET1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SO−8 FLAT LEAD

(BR)DSS

CASE 488AA

30 V

Device

STYLE 1

G (4)

ORDERING INFORMATION

http://onsemi.com

N−CHANNEL MOSFET

3.0 mW @ 4.5 V

2.0 mW @ 10 V

= Assembly Location

= Year

= Work Week

= Lot Traceability

D (5,6)

DS(ON)

(Pb−Free)

Package

SO−8 FL

Publication Order Number:

MAX

S (1,2,3)

NTMFS4922NE/D

MARKING

DIAGRAM

4922NE

AYWZZ

Tape & Reel

Shipping

1500 /

147 A

MAX

†

Related parts for NTMFS4922NET1G

NTMFS4922NET1G Summary of contents

Page 1

... 100 A Dmax T , −55 to ° +150 Device STG NTMFS4922NET1G S dV 162 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. T 260 ° http://onsemi.com ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ (Note 3) Junction−to−Top 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

T 3 160 140 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.0028 0.0026 0.0024 0.0022 0.0020 0.0018 0.0016 0.0014 ...

Page 5

C iss 5000 4000 3000 C oss 2000 1000 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 260 240 220 200 180 160 140 120 100 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 t, ...

Page 7

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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