ES2G/2T Vishay Semiconductors, ES2G/2T Datasheet - Page 3

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ES2G/2T

Manufacturer Part Number
ES2G/2T
Description
Rectifiers 2.0 Amp 400V 35ns
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of ES2G/2T

Product Category
Rectifiers
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.1 V
Recovery Time
35 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
SMB
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
750
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88588
Revision: 20-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
0
Percent of Rated Peak Reverse Voltage (%)
T
J
0.4
= 125 °C
Instantaneous Forward Voltage (V)
20
T
J
= 150 °C
0.6
0.096 (2.44)
0.084 (2.13)
0.086 (2.20)
0.077 (1.95)
0.060 (1.52)
0.030 (0.76)
40
T
T
0.8
J
T
T
J
= 150 °C
J
J
= 125 °C
= 100 °C
= 25 °C
T
60
J
= 25 °C
T
J
1
= 100 °C
DO-214AA (SMB)
0.205 (5.21)
0.180 (4.57)
0.160 (4.06)
0.220 (5.59)
80
Cathode Band
1.2
0.008 (0.2)
100
1.4
0 (0)
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
(2.18 MIN.)
0.086 MIN.
200
160
120
100
80
40
10
0
1
0.1
25
Figure 5. Reverse Switching Characteristics
Vishay General Semiconductor
Figure 6. Typical Junction Capacitance
Mounting Pad Layout
50
1
Junction Temperature (°C)
0.220 REF
Reverse Voltage (V)
75
100
10
(2.159 MAX.)
0.085 MAX.
ES2F & ES2G
125
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 2 A, 20 A/µs
T
f = 1.0 MHz
V
at 1 A, 100 A/µs
at 5 A, 50 A/µs
at 1 A, 100 A/µs
J
sig
100
= 25 °C
= 50 mVp-p
150
www.vishay.com
Q
t
rr
rr
1000
175
3

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