BZV85-C5V1 T/R NXP Semiconductors, BZV85-C5V1 T/R Datasheet - Page 5
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BZV85-C5V1 T/R
Manufacturer Part Number
BZV85-C5V1 T/R
Description
Zener Diodes DIODE ZENER 5 PCT TAPE AXIAL
Manufacturer
NXP Semiconductors
Datasheet
1.BZV85-C62_TR.pdf
(10 pages)
Specifications of BZV85-C5V1 T/R
Product Category
Zener Diodes
Rohs
yes
Zener Voltage
5.1 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
0.85 mV/k
Power Dissipation
1.3 W
Maximum Reverse Leakage Current
3 uA
Maximum Zener Impedance
10 Ohms
Maximum Operating Temperature
+ 200 C
Mounting Style
Through Hole
Package / Case
DO-41
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
5000
Part # Aliases
BZV85-C5V1,113
NXP Semiconductors
Table 8.
T
BZV85_SER_3
Product data sheet
BZV85-
Cxxx
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
j
= 25 C unless otherwise specified.
Working
voltage
V
at I
Min
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
Z
Characteristics per type
(V)
test
Max
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
Differential
resistance
r
at I
Max
15
15
13
13
10
7
4
3.5
3
5
5
8
10
10
10
15
15
20
24
25
30
40
45
45
50
60
75
100
125
150
175
200
225
dif
test
( )
Temperature
coefficient
S
at I
Min
0
0.6
1.3
2.5
3.1
3.8
4.7
5.3
6.3
7.4
8.9
10.7
11.8
13.6
16.6
18.3
20.1
22.4
24.8
27.2
29.6
34.0
37.4
40.8
46.8
52.2
60.5
66.5
3.5
3.5
2.7
2.0
0.5
Z
(mV/K)
test
Max
0
0.7
2.2
2.7
3.6
4.3
5.5
6.1
7.2
8.5
9.3
10.8
12.0
13.6
15.4
17.1
19.1
22.1
24.3
27.5
32.0
35.0
39.9
43.0
48.3
52.5
56.5
63.0
72.5
81.0
88.0
1.0
1.0
Rev. 03 — 10 November 2009
Test
current
I
(mA)
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
6
4
4
4
4
4
4
test
Diode
capacitance
C
at f = 1 MHz;
V
Max
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
50
50
45
45
45
40
40
40
40
35
35
35
R
d
(pF)
= 0 V
Reverse
current
I
Max
50
10
5
3
3
2
2
2
1
0.7
0.7
0.2
0.2
0.2
0.2
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
R
( A)
V
1.0
1.0
1.0
1.0
2.0
2.0
3.0
4.0
4.5
5.0
6.5
7.0
7.7
8.4
9.1
10.5
11.0
12.5
14.0
15.5
17
19
21
23
25
27
30
33
36
39
43
48
53
R
(V) Max (A)
Non-repetitive peak
reverse current
I
at t
T
8.0
8.0
8.0
8.0
8.0
8.0
7.0
7.0
5.0
5.0
4.0
4.0
3.0
3.0
3.0
2.5
1.75
1.75
1.75
1.5
1.5
1.2
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.35
0.3
BZV85 series
ZSM
amb
Voltage regulator diodes
p
= 100 s;
= 25 C
© NXP B.V. 2009. All rights reserved.
at t
T
Max (mA)
2000
1950
1850
1800
1750
1700
1620
1550
1500
1400
1340
1200
1100
1000
900
760
700
600
540
500
450
400
380
350
320
296
270
246
226
208
186
171
161
amb
p
= 10 ms;
= 25 C
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