BZX84-C30 /T3 NXP Semiconductors, BZX84-C30 /T3 Datasheet - Page 8
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BZX84-C30 /T3
Manufacturer Part Number
BZX84-C30 /T3
Description
Zener Diodes DIODE ZENER 5 PCT TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.BZX84-B18_T3.pdf
(16 pages)
Specifications of BZX84-C30 /T3
Product Category
Zener Diodes
Rohs
yes
Zener Voltage
30 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
26.6 mV/k
Power Dissipation
250 mW
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
80 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-236AB
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BZX84-C30,235
NXP Semiconductors
Table 9.
T
[1]
[2]
BZX84_SER
Product data sheet
BZX84-
xxx
56
62
68
75
j
= 25
f = 1 MHz; V
t
p
= 100 s; square wave; T
C unless otherwise specified.
Sel Working
B
C
B
C
B
C
A
B
C
Characteristics per type; BZX84-A27 to BZX84-C75
voltage
V
I
Min
54.9
52.0
60.8
58.0
66.6
64.0
74.25 75.75 170
73.5
70.0
Z
R
Z
= 2 mA
= 0 V
(V)
Max
57.1
60.0
63.2
66.0
69.4
72.0
76.5
79.0
j
Differential resistance
r
I
Typ
100
120
150
= 25 C before surge
Z
dif
= 0.5 mA I
()
Max
425
450
475
500
All information provided in this document is subject to legal disclaimers.
Typ
70
80
90
95
Z
= 2 mA
Max
200
215
240
255
Rev. 4 — 22 March 2013
Reverse
current
I
Max V
0.05 39.2
0.05 43.4
0.05 47.6
0.05 52.5
R
(A)
R
…continued
(V) Min
Temperature
coefficient
S
I
52.2
58.8
65.6
73.4
Z
Z
= 2 mA
(mV/K)
Typ
57.0
64.4
71.7
80.2
Max
63.8
71.6
79.8
88.6
BZX84 series
Diode
capacitance
C
Max
40
35
35
35
Voltage regulator doides
d
(pF)
[1]
© NXP B.V. 2013. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
0.3
0.3
0.25
0.20
ZSM
(A)
[2]
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