DMP3105LVT-7 Diodes Inc., DMP3105LVT-7 Datasheet - Page 5

• Manufacturer Part Number: DMP3105LVT-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMP3105LVT-7

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 3.9 A
• Resistance Drain-source Rds (on): 75 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOT26-6
• Fall Time: 64 ns
• Forward Transconductance Gfs (max / Min): 5 S
• Gate Charge Qg: 19.8 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.15 W
• Rise Time: 17.7 ns
• Typical Turn-off Delay Time: 269 ns

Package Outline Dimensions
Suggested Pad Layout
DMP3105LVT
Document number: DS35504 Rev. 2 - 2
A
A2
A1
E1
0.001
0.01
0.00001
0.1
1
e
e1
D
Y1
0.0001
6x b
C
E
0.001
C
X (6x)
4x 1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
θ
Y (6x)
0.01
www.diodes.com
L
c
5 of 6
θ
0.1
L2
Dimensions Value (in mm)
Y1
C
X
Y
1
Dim
All Dimensions in mm
A1
A2
E1
e1
L2
θ1
A
D
E
b
L
c
e
θ
0.01 0.10
0.84 0.90
0.30 0.45
0.12 0.20
0.30 0.50
Min
—
—
—
—
—
—
—
0°
4°
TSOT26
0.950
0.700
1.000
3.199
10
Max
1.00
12°
—
—
—
—
—
—
8°
2.90
2.80
1.60
0.95
1.90
0.25
Typ
—
—
—
—
4°
100
DMP3105LVT
1000
© Diodes Incorporated
November 2011