ZXMN3A01ZTA Diodes Inc. / Zetex, ZXMN3A01ZTA Datasheet - Page 4

• Manufacturer Part Number: ZXMN3A01ZTA
• Description: MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXMN3A01ZTA

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 3.3 A
• Resistance Drain-source Rds (on): 120 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Fall Time: 3.6 ns
• Gate Charge Qg: 2.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.97 W
• Rise Time: 4.1 ns
• Typical Turn-off Delay Time: 13.5 ns

ZXMN3A01Z
Document number DS35722 Rev. 1 - 2
1,000
1.4
1.2
1.0
0.8
0.6
100
0.1
10
10
1
-50 -25
0
0
Fig. 8 On-Resistance Variation with Temperature
T = 125°C
A
f = 1MHz
T = 150°C
Fig. 6 Typical Transfer Characteristics
A
V
T , JUNCTION TEMPERATURE ( C)
1
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
GS
J
5
DS
, GATE-SOURCE VOLTAGE (V)
0
2
10
25
T = -55°C
A
I = 250µA
V
D
T = 25°C
GS
T = 85°C
A
A
50
3
=
15
V
DS
75
C
C
C
4
20
iss
oss
rss
100
°
5
25
125
150
30
6
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0.01
0.01
0.1
10
10
0.1
10
8
6
4
2
0
1
1
0
0.01
0
V
GS
V
V
I =
D
GS
Fig. 9 Diode Forward Voltage vs. Current
DS
0.2
= 2.5V
V , SOURCE-DRAIN VOLTAGE (V)
= 3.5V
2.5
1
= 15V
I , DRAIN-SOURCE CURRENT (A)
D
SD
Q
Fig. 7 Typical On-Resistance vs.
A
Drain Current and Gate Voltage
g
T = 150°C
, TOTAL GATE CHARGE
A
0.4
V
GS
Fig. 11 Gate Charge
0.1
2
V
= 3.0V
Diodes Incorporated
GS
= 4.0V
0.6
A Product Line of
3
0.8
V
GS
T = 25°C
= 5.0V
A
4
1
1.0
ZXMN3A01Z
(nC)
V
GS
5
1.2
© Diodes Incorporated
= 10V
February 2012
1.4
6
10