FCPF600N60Z Fairchild Semiconductor, FCPF600N60Z Datasheet - Page 2

• Manufacturer Part Number: FCPF600N60Z
• Description: MOSFET 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCPF600N60Z

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.4 A
• Resistance Drain-source Rds (on): 600 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220F-3
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 6.7 S
• Gate Charge Qg: 20 nC
• Minimum Operating Temperature: - 50 C
• Power Dissipation: 28 W
• Rise Time: 7 ns
• Typical Turn-off Delay Time: 39 ns

©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
BV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
DS(on)
iss
oss
rss
oss
oss
SD
g(tot)
gs
gd
rr
AS
SD
Device Marking
Symbol
DSS
DS
FCPF600N60Z
J
= 1.5 A, V
FCP600N60Z
DSS
≤ 3.7 A, di/dt ≤ 200 A/μs, V
eff.
DD
= 50 V, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25 Ω, Starting T
DD
FCPF600N60Z
≤ BV
FCP600N60Z
Device
DSS
Parameter
, Starting T
J
= 25°C
T
J
C
= 25°C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
V
V
I
V
V
V
V
V
V
dI
V
V
V
V
f = 1 MHz
V
V
V
Drain open
V
V
D
V
GS
GS
GS
DS
DS
GS
GS
GS
DS
DD
GS
GS
GS
DS
DS
DS
DS
F
GS
= 10 mA, Referenced to 25
/dt = 100 A/μs
= 480 V, V
= 480 V, T
= 0 V, I
= 0 V, I
= 0 V, I
= 0 V, I
= ±20 V, V
= 0 V, I
= V
= 10 V, I
= 20 V, I
= 25 V, V
= 380 V, V
= 0 V to 480 V, V
= 380 V, I
= 380 V, I
= 10 V, R
= 10 V
DS
Test Conditions
, I
2
D
D
D
SD
SD
Reel Size
D
D
D
= 10 mA, T
= 10 mA, T
= 7.4 A
GS
D
G
= 250 μA
D
= 3.7 A
C
= 3.7 A
= 3.7 A
GS
= 3.7 A
GS
DS
= 3.7 A
= 4.7 Ω
= 3.7 A
= 125
-
-
= 0 V
= 0 V
= 0 V
= 0 V, f = 1.0 MHz
GS
o
C
J
J
= 0 V
= 25°C
= 150°C
o
(Note 4)
(Note 4)
C
Tape Width
-
-
Min.
600
650
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.67
16.5
2.89
0.51
200
700
840
630
2.3
6.7
3.4
7.5
30
74
20
13
39
7
9
-
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
1120
22.2
±10
840
3.5
0.6
7.4
1.2
10
45
26
36
24
88
28
1
50
50
-
-
-
-
-
-
-
-
-
-
-
-
V/
Unit
pF
pF
pF
pF
nC
nC
nC
μC
μA
uA
pF
ns
Ω
ns
ns
ns
ns
Ω
V
V
V
V
S
A
A
V
o
C