NVF3055-100T1G ON Semiconductor, NVF3055-100T1G Datasheet - Page 3

• Manufacturer Part Number: NVF3055-100T1G
• Description: MOSFET NFET 60V 3A 0.100R
• Manufacturer: ON Semiconductor

Specifications of NVF3055-100T1G

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3 A
• Resistance Drain-source Rds (on): 88 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 13 ns
• Gate Charge Qg: 10.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.1 W
• Rise Time: 14 ns

0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.1
2.2
1.8
1.6
1.4
1.2
0.8
0.6
6
5
4
3
2
0
−50
1
0
2
1
0
0
V
GS
I
V
D
GS
−25
V
= 1.5 A
Figure 5. On−Resistance Variation with
= 10 V
DS,
Figure 1. On−Region Characteristics
= 10 V
1
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
T
J
V
0
, JUNCTION TEMPERATURE (°C)
GS
1
I
V
D,
Gate−to−Source Voltage
GS
= 8 V
DRAIN CURRENT (AMPS)
25
2
= 10 V
V
Temperature
GS
T
T
T
J
J
50
= 6 V
J
= 100°C
= −55°C
= 25°C
3
2
75
100
4
V
3
GS
V
V
125
GS
GS
= 4.5 V
5
= 4 V
= 5 V
150
http://onsemi.com
175
4
6
3
1000
0.16
0.14
0.12
0.08
0.06
0.04
0.02
100
0.1
10
5
4
1
0
1
6
3
2
0
0
3
0
Figure 4. On−Resistance versus Drain Current
V
Figure 6. Drain−to−Source Leakage Current
V
GS
V
GS
T
V
DS
V
J
DS,
= 0 V
GS,
= 15 V
= 100°C
3.5
Figure 2. Transfer Characteristics
10
≥ 10 V
1
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
GATE−TO−SOURCE VOLTAGE (VOLTS)
J
= 25°C
I
D,
DRAIN CURRENT (AMPS)
20
and Gate Voltage
4
2
versus Voltage
T
T
T
J
J
J
T
T
T
= 150°C
= 125°C
= 100°C
J
J
J
= 25°C
= 100°C
= −55°C
4.5
30
T
3
J
= −55°C
40
5
4
5.5
50
5
60
6
6