VN0109N3-G Supertex, VN0109N3-G Datasheet

VN0109N3-G

Manufacturer Part Number

VN0109N3-G

Description

MOSFET MOSFET N-CHANNEL ENHANCE-MODE 90V

Manufacturer

Supertex

Datasheet

1.VN0109N3-G.pdf (5 pages)

Specifications of VN0109N3-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

90 V

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

1000

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Features

►

Applications

►

Ordering Information

For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specification VF15 for layout and dimensions.

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Supertex inc.

Product Summary

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VN0109

Device

DSS

(V)

/BV

ISS

Supertex inc.

DGS

and fast switching speeds

VN0109N3-G

Package

TO-92

(max)

DS(ON)

3.0

(Ω)

N-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55

(min)

C to +150

(Die in wafer form)

D(ON)

2.0

(A)

VN1509NW

Value

±20V

DGS

DSS

General Description

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven, silicon-gate

manufacturing process. This combination produces a device with

the power handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient inherent in

MOS devices. Characteristic of all MOS structures, this device

is free from thermal runaway and thermally-induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Pin Configuration

Product Marking

Package may or may not include the following marks: Si or

Wafer / Die Options

(Die on adhesive tape)

Y Y W W

0 1 0 9

SiVN

Tel: 408-222-8888

VN1509NJ

SOURCE

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

= “Green” Packaging

www.supertex.com

DRAIN

GATE

(Die in waffle pack)

VN1509ND

VN0109

Related parts for VN0109N3-G

VN0109N3-G Summary of contents

Page 1

... Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Device TO-92 VN0109 VN0109N3-G For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’). Refer to Die Specification VF15 for layout and dimensions. Product Summary R BV /BV ...

Page 2

... SD t Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 10 (ON) t d(ON) VDD 10% OUTPUT 0V Supertex inc. I Power Dissipation D † (pulsed) C (W) (A) 2.0 1 unless otherwise specified Min ...

Page 3

... V (volts) DS Transconductance vs. Drain Current 1 25V DS 0.8 0.6 0.4 0 0.2 0.4 0.6 I (amperes) D Maximum Rated Safe Operating Area 10 1.0 TO-92 (DC) 0 0.01 0.1 1.0 V (volts) DS Supertex inc 10V GS 8.0V 6. 125 O C 0.8 1.0 10 100 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics 2 10V GS 2.0 1.5 1.0 0 2.0 4 ...

Page 4

... BV Variation with Temperature DSS 1.1 1.0 0.9 - Transfer Characteristics 2 25V DS 2 -55 A 1.5 1.0 0 Capacitance vs. Drain-to-Source Voltage 100 Supertex inc. (cont.) 5.0 4.0 3.0 2.0 1 100 150 ( C) O 1.6 1 1.2 125 C O 1.0 0.8 0 (volts 1.0MHz ISS ...

Page 5

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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