STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 18

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

Packaging mechanical data
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Packaging mechanical data
Table 13.
Dim.
D1
A0
B0
K0
P0
P1
P2
W
D
R
E
F
T
D²PAK (TO-263) tape and reel mechanical data
Min.
10.5
15.7
1.59
1.65
11.4
11.9
0.25
23.7
1.5
4.8
3.9
1.9
50
Tape
mm
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Max.
10.7
15.9
1.61
1.85
11.6
12.1
0.35
24.3
1.6
5.0
4.1
2.1
Dim.
G
A
B
C
D
N
T
Base qty
Bulk qty
Min.
12.8
20.2
24.4
100
1.5
Reel
mm
Max.
1000
1000
13.2
26.4
30.4
330