DMG9N65CT Diodes Inc., DMG9N65CT Datasheet - Page 3

• Manufacturer Part Number: DMG9N65CT
• Description: MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A
• Manufacturer: Diodes Inc.

Specifications of DMG9N65CT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 9 A
• Resistance Drain-source Rds (on): 1.3 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 28 ns
• Gate Charge Qg: 39 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.15 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 122 ns

DMG9N65CT
Document number: DS35619 Rev. 6 - 2
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0
0
50
Fig. 5 On-Resistance Variation with Temperature
-25
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
T , JUNCTION TEMPERATURE ( C)
DS
4
J
Fig. 3 Typical On-Resistance vs.
I , DRAIN-SOURCE CURRENT
Drain Current and Gate Voltage
2
D
0
25
8
4
50
12
6
75
V
V
V
GS
I = 5A
D
GS
GS
=
100
= 10V
= 20V
10
16
V
8
V

I = 10A
GS
D
125
=
15
V
20
10
150
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0.001
0.01
3.0
2.5
2.0
1.5
1.0
0.5
0.1
- 50
4
3
2
1
0
10
0
1
0
0
Fig. 6 On-Resistance Variation with Temperature
V
-25
V
DS
GS
T , JUNCTION TEMPERATURE ( C)
Fig. 2 Typical Transfer Characteristics
= 10V
= 10V
J
1
Fig. 4 Typical On-Resistance vs.
2
Drain Current and Temperature
V
GS
0
, GATE-SOURCE VOLTAGE
I , DRAIN CURRENT
D
T = -55°C
2
25
A
T = 25°C
4
A
T = 85°C
A
T = 125°C
A
50
T = 150°C
A
3
6
75
V
GS
I = 5A
D
4
DMG9N65CT
=
V
T = -55°C
100
T = 125°C
I = 10A
T = 25°C
10
GS
T = 85°C
D
A
A
A
A
V
=
8
T = 150°C
15

A
V
125
© Diodes Incorporated
5
February 2013
10
150
6