5LN01SS-TL-H ON Semiconductor, 5LN01SS-TL-H Datasheet

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5LN01SS-TL-H

Manufacturer Part Number
5LN01SS-TL-H
Description
MOSFET NCH 1.5V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of 5LN01SS-TL-H

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
50 V
Continuous Drain Current
0.1 A
Resistance Drain-source Rds (on)
7.8 Ohms
Mounting Style
SMD/SMT
Package / Case
SC-81
Power Dissipation
0.15 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
5LN01SS-TL-H
Manufacturer:
ON/安森美
Quantity:
20 000
Ordering number : EN6560B
5LN01SS
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7029A-003
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
0.45
1
1
Parameter
1.4
3
3
2
2
0.25
0.2
0.1
1 : Gate
2 : Source
3 : Drain
SANYO : SSFP
0 to 0.02
5LN01SS-TL-E
5LN01SS-TL-H
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
5LN01SS
62712 TKIM/31506PE MSIM TB-00002117/82200 TSIM TA-2065
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL
Electrical Connection
Conditions
1
TL
3
2
DATA SHEET
: SSFP
: SC-81
Marking
Ratings
--55 to +150
YB
0.15
±10
150
0.1
0.4
50
No.6560-1/7
Unit
°C
°C
W
A
A
V
V

Related parts for 5LN01SS-TL-H

5LN01SS-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 8,000 pcs./reel 5LN01SS-TL-E Packing Type: TL 5LN01SS-TL-H Electrical Connection 1 http://semicon.sanyo.com/en/network 62712 TKIM/31506PE MSIM TB-00002117/82200 TSIM TA-2065 DATA SHEET Ratings 50 ±10 0.1 ...

Page 2

... R L =500Ω PW=10μ OUT D.C.≤1% G 5LN01SS P.G 50Ω S Ordering Information Device 5LN01SS-TL-E 5LN01SS-TL-H 5LN01SS Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =50V =0V I GSS V GS =±8V = (off =10V =100μA | yfs | V DS =10V =50mA ...

Page 3

... Ta=75° --25° 1 0.01 0.1 Drain Current (on --60 --40 -- 100 Ambient Temperature °C 5LN01SS 0.20 0.18 0.16 0. =1.5V 0.12 0.10 0.08 0.06 0.04 0.02 0 0.8 1.0 0 IT00054 100 Ta=25° 1 0.01 IT00056 100 V GS =2. ...

Page 4

... Ciss 7 5 Coss 3 2 Crss 1 Drain-to-Source Voltage 0.2 0.15 0.1 0. 100 Ambient Temperature °C 5LN01SS 1000 100 1.0 1.1 0.01 IT00062 10 f=1MHz V DS =10V =100mA ...

Page 5

... Embossed Taping Specifi cation 5LN01SS-TL-E, 5LN01SS-TL-H 5LN01SS No.6560-5/7 ...

Page 6

... Outline Drawing 5LN01SS-TL-E, 5LN01SS-TL-H 5LN01SS Land Pattern Example Mass (g) Unit 0.0018 mm * For reference Unit: mm 0.5 0.45 0.45 0.45 0.45 No.6560-6/7 ...

Page 7

... Note on usage : Since the 5LN01SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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