MCH3377-S-TL-E ON Semiconductor, MCH3377-S-TL-E Datasheet - Page 2

• Manufacturer Part Number: MCH3377-S-TL-E
• Description: MOSFET
• Manufacturer: ON Semiconductor

Specifications of MCH3377-S-TL-E

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 3 A
• Resistance Drain-source Rds (on): 83 mOhms
• Mounting Style: SMD/SMT
• Package / Case: MCPH-3
• Power Dissipation: 1 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
MCH3377-TL-E
MCH3377-TL-H
P.G
--4V
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
G
50Ω
V DD = --10V
D
S
I D = --1.5A
R L =6.67Ω
MCH3377
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
Package
MCPH3
MCPH3
I D =--1mA, V GS =0V
V DS =--20V, V GS =0V
V GS =±8V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--1.5A
I D =--1.5A, V GS =--4.5V
I D =--1A, V GS =- -2.5V
I D =--0.2A, V GS =--1.8V
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
V DS =--10V, V GS =--4.5V, I D =--3A
I S =--3A, V GS =0V
MCH3377
Conditions
3,000pcs./reel
3,000pcs./reel
Shipping
min
--0.4
Pb Free and Halogen Free
--20
2.2
Ratings
typ
Pb Free
--0.83
memo
375
130
3.8
8.1
4.6
0.8
1.3
63
88
77
58
26
42
37
max
--1.3
--1.2
±10
125
200
--1
83
No.A0957-2/7
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V