MCH6336-P-TL-E ON Semiconductor, MCH6336-P-TL-E Datasheet - Page 4

• Manufacturer Part Number: MCH6336-P-TL-E
• Description: MOSFET
• Manufacturer: ON Semiconductor

Specifications of MCH6336-P-TL-E

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Continuous Drain Current: - 5 A
• Resistance Drain-source Rds (on): 43 mOhms
• Mounting Style: SMD/SMT
• Package / Case: MCPH-3
• Power Dissipation: 1.5 W

--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
0
V DS = --6V
I D = --5A
20
1
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
2
When mounted on ceramic substrate
(1200mm
60
V GS -- Qg
P D -- Ta
3
80
2
✕0.8mm)
4
100
5
120
140
6
IT12995
IT12997
160
MCH6336
7
--0.01
--1.0
--0.1
--10
--0.01
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Ta=25° C
Single pulse
When mounted on ceramic substrate (1200mm
2 3
Drain-to-Source Voltage, V DS -- V
5 7
Operation in this area
is limited by R DS (on).
--0.1
2 3
A S O
5 7
--1.0
2 3
2
✕0.8mm)
5
PW≤10μs
No. A0958-4/7
7
--10
IT12996
2
3