US1G/11T Vishay Semiconductors, US1G/11T Datasheet - Page 3
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US1G/11T
Manufacturer Part Number
US1G/11T
Description
Rectifiers 400 Volt 1.0A 50ns 30 Amp IFSM
Manufacturer
Vishay Semiconductors
Datasheet
1.US1MHE32GT.pdf
(5 pages)
Specifications of US1G/11T
Product Category
Rectifiers
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1 V
Recovery Time
50 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
SMA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
1800
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
US1G/11T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 88768
Revision: 27-Aug-07
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Instantaneous Forward Characteristics
0.01
0.01
0.01
100
100
100
0.1
0.1
0.1
10
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
1
0.3
0.2
0
T
US1A - US1G
Percent of Rated Peak Reverse Voltage (%)
J
= 125 °C
T
0.5
J
0.7
Instantaneous Forward Voltage (V)
= 125 °C
Instantaneous Forward Voltage (V)
20
T
0.7
T
J
J
= 150 °C
1.2
= 150 °C
T
J
T
40
= 150 °C
J
0.9
T
T
= 25 °C
J
J
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
= 125 °C
= 25 °C
For technical questions within your region, please contact one of the following:
1.7
T
J
1.1
= 100 °C
60
T
T
T
J
J
J
2.2
= 100 °C
= 100 °C
= 25 °C
1.3
US1A - US1G
US1J - US1M
80
2.7
1.5
100
3.2
1.7
100
100
0.1
10
10
1000
Figure 6. Typical Reverse Leakage Characteristics
1
0.01
1
100
0.01
0.1
Figure 8. Typical Transient Thermal Impedance
0.1
10
1
Vishay General Semiconductor
0
Figure 7. Typical Junction Capacitance
Percent of Rated Peak Reverse Voltage (%)
US1J - US1M
US1J - US1M
0.1
20
t - Pulse Duration (s)
Reverse Voltage (V)
1
US1A - US1G
T
J
40
= 150 °C
US1A thru US1M
1
T
J
60
= 125 °C
10
T
T
f = 1.0 MHz
V
J
J
sig
10
= 100 °C
= 25 °C
= 50 mVp-p
T
J
80
= 25 °C
www.vishay.com
100
100
100
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