ZXTN4006ZTA Diodes Inc. / Zetex, ZXTN4006ZTA Datasheet - Page 3

• Manufacturer Part Number: ZXTN4006ZTA
• Description: MOSFET Pwr Hi Voltage Trans SOT89 T&R 1K
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXTN4006ZTA

• Rohs: yes

Electrical Characteristics
Electrical Characteristics
Collector-Emitter Breakdown Voltage (Note 7)
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Notes:
Datasheet Number: DS35609 Rev. 1 - 2
ZXTN4006Z
7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
500
400
300
200
100
Characteristic
100µ
0
85°C
25°C
-55°C
125°C
I
C
1m
Collector Current (A)
h
FE
@T
v I
10m
A
= 25°C unless otherwise specified
C
100m
V
CE
Symbol
BV
V
=0.32V
I
I
BE(on)
h
CBO
EBO
t
t
t
t
t
t
(d)
(r)
(s)
(s)
FE
(f)
(f)
CEO
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1
3 of 5
Min
200
100
60
-
-
-
-
-
-
-
-
-
1.0
0.8
0.6
0.4
0.2
30
25
20
15
10
100m
100µ
5
0
V
2730
0.72
Typ
600
496
293
243
CE
56
-
-
-
-
-
=0.32V
Capacitance v Voltage
I
C
1m
V
Max
0.95
50
50
Diodes Incorporated
Cobo
BE(on)
-
-
-
-
-
-
-
-
-
Collector Current (A)
1
A Product Line of
Voltage(V)
25°C
v I
Unit
10m
nA
nA
ns
ns
ns
ns
ns
ns
V
V
-
85°C
C
-55°C
I
V
V
I
I
I
V
-I
V
I
C
C
C
C
B1
10
B2
CB
EB
CC
CC
= 10mA
= 85mA, V
= 150mA, V
= 150mA, V
100m
= -I
= 1.5mA, V
= 200V
= 7V
= 160V, I
= 80V, I
f = 1MHz
B2
Test Condition
ZXTN4006Z
= 1.5mA, V
125°C
C
CE
C
= 150mA,
CE
CE
CE(ON)
= 150mA,
© Diodes Incorporated
= 0.25V
100
= 0.32V
= 0.32V
1
January 2012
CE(ON)
= 0.32V
= 4V