ZXTP4001ZTA Diodes Inc. / Zetex, ZXTP4001ZTA Datasheet - Page 3

• Manufacturer Part Number: ZXTP4001ZTA
• Description: MOSFET Pwr Mid Perf Trans SOT89 T&R 1K
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXTP4001ZTA

• Rohs: yes

Electrical Characteristics
Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Notes:
Datasheet Number: DS35712 Rev. 1 - 2
ZXTP4001Z
7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
Characteristic
350
300
250
200
150
100
50
100µ
0
125°C
-I
-55°C
85°C
25°C
C
1m
Collector Current (A)
h
@T
@T
FE
A
A
v I
= 25°C unless otherwise specified
= 25°C unless otherwise specified
10m
C
Symbol
V
BV
BV
V
BV
CE
100m
I
I
BE(on)
h
CBO
EBO
t
t
t
t
t
t
(d)
= -0.15V
(r)
(s)
(s)
FE
(f)
(f)
CBO
CEO
EBO
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3 of 5
Min
100
-60
-60
60
-7
-
-
-
-
-
-
-
-
-
1.0
0.8
0.6
0.4
0.2
50
45
40
35
30
25
20
15
10
100µ
100m
5
0
-0.72
Typ
-8.3
300
420
352
281
245
V
48
-
-
-
-
-
-
CE
= -0.15V
Capacitance v Voltage
-I
-0.95
Max
C
-50
-50
V
1m
Diodes Incorporated
-
-
-
-
-
-
-
-
-
-
-
BE(on)
Collector Current (A)
A Product Line of
Cobo
1
25°C
-Voltage(V)
Unit
v I
nA
nA
ns
ns
ns
ns
ns
ns
V
V
V
V
-
-
10m
C
85°C
-55°C
I
I
I
V
V
I
I
I
V
-I
V
-I
C
C
E
C
C
C
B2
B2
CB
EB
CC
CC
= -100µA
= -100µA
= -10mA
= -85mA, V
= -150mA, V
= -150mA, V
= 1.5mA, V
= -1.5mA V
= -60V
= -7V
= -48V, I
= -48V, I
10
100m
f = 1MHz
Test Condition
ZXTP4001Z
125°C
C
C
CE
= -150mA,
= -150mA,
CE
CE
CE(ON)
CE(ON)
© Diodes Incorporated
= -0.1V
= -0.15V
= -0.15V
February 2012
= -0.15V
= - 4V