ZXTN4002ZTA Diodes Inc. / Zetex, ZXTN4002ZTA Datasheet - Page 3

• Manufacturer Part Number: ZXTN4002ZTA
• Description: MOSFET Pwr Mid Perf Trans SOT89 T&R 1K
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXTN4002ZTA

• Rohs: yes

Electrical Characteristics
Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Notes:
Datasheet Number: DS35677 Rev. 1 - 2
ZXTN4002Z
7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
500
400
300
200
100
100µ
Characteristic
0
85°C
25°C
125°C
-55°C
I
C
1m
Collector Current (A)
h
FE
@T
@T
10m
v I
A
A
C
= 25°C unless otherwise specified
= 25°C unless otherwise specified
100m
V
CE
Symbol
=0.2V
BV
BV
V
BV
I
I
BE(on)
h
CBO
EBO
t
t
t
t
t
t
(d)
(r)
(s)
(s)
FE
(f)
(f)
CBO
CEO
EBO
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1
3 of 5
Min
100
100
100
60
7
-
-
-
-
-
-
-
-
-
1.0
0.8
0.6
0.4
0.2
30
25
20
15
10
100m
100µ
5
0
V
1540
0.72
CE
Typ
468
441
251
204
8.3
22
-
-
-
-
-
-
=0.2V
Capacitance v Voltage
I
C
1m
V
Max
0.95
Cobo
50
50
BE(on)
Diodes Incorporated
Collector Current (A)
-
-
-
-
-
-
-
-
-
-
-
1
A Product Line of
25°C
Voltage(V)
v I
10m
Unit
nA
nA
ns
ns
ns
ns
ns
ns
V
V
V
V
-
C
-55°C
85°C
I
I
I
V
V
I
I
I
V
-I
V
-I
10
C
C
E
C
C
C
B2
B2
CB
EB
CC
CC
= 100µA
= 100µA
= 10mA
= 85mA, V
= 150mA, V
= 150mA, V
100m
= 1.5mA, V
= 1.5mA, V
= 100V
= 7V
= 80V, I
= 80V, I
f = 1MHz
Test Condition
ZXTN4002Z
125°C
C
C
CE
= 150mA,
= 150mA,
CE
CE
CE(ON)
CE(ON)
© Diodes Incorporated
= 0.15V
100
= 0.2V
= 0.2V
1
January 2012
= 4V
= 0.2V