ALD1102BSAL Advanced Linear Devices, ALD1102BSAL Datasheet

ALD1102BSAL

Manufacturer Part Number

ALD1102BSAL

Description

MOSFET Dual N-Ch FET 10.6 500mW 0.7V 10Ohm

Manufacturer

Advanced Linear Devices

Datasheet

1.ALD1102BSAL.pdf (8 pages)

Specifications of ALD1102BSAL

Rohs

yes

Current page: 1 of 8
Download datasheet (74Kb)

FEATURES

• Low threshold voltage of 0.7V

• Low input capacitance

• Low Vos grades -- 2mV, 5mV, 10mV

• High input impedance -- 10

• Low input and output leakage currents

• Negative current (I

• Enhancement-mode (normally off)

• DC current gain 10

• RoHS compliant

ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))

* Contact factory for leaded (non-RoHS) or high temperature versions.

GENERAL DESCRIPTION

The ALD1102 is a monolithic dual P-channel matched transistor pair

intended for a broad range of analog applications. These enhancement-

mode transistors are manufactured with Advanced Linear Devices' en-

hanced ACMOS silicon gate CMOS process.

The ALD1102 offers high input impedance and negative current tempera-

ture coefficient. The transistor pair is matched for minimum offset voltage

and differential thermal response, and it is designed for switching and

amplifying applications in +2V to +12V systems where low input bias

current, low input capacitance and fast switching speed are desired. Since

these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment. When

used with an ALD1101, a dual CMOS analog switch can be constructed.

In addition, the ALD1102 is intended as a building block for differential

amplifier input stages, transmission gates, and multiplexer applications.

The ALD1102 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 50pA at room temperature. For example, DC beta of the device

at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

0°C to +70°C

8-Pin

Small Outline

Package (SOIC)

ALD1102ASAL

ALD1102BSAL

ALD1102SAL

INEAR

DVANCED

EVICES,

Operating Temperature Range

) temperature coefficient

NC.

0°C to +70°C

8-Pin

Plastic Dip

Package

ALD1102APAL

ALD1102BPAL

ALD1102PAL

Ω typical

DUAL P-CHANNEL MATCHED MOSFET PAIR

-55°C to +125°C

8-Pin

CERDIP

Package

ALD1102DA

www.aldinc.com

PIN CONFIGURATION

BLOCK DIAGRAM

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Analog switches

• Choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog inverter

SOURCE

* IC pin is internally connected. Do not connect externally.

DRAIN

GATE

DRAIN 2 (5)

DRAIN 1 (3)

SAL, PAL, DA PACKAGES

ALD1102A/ALD1102B

GATE 1 (2)

GATE 2 (6)

TOP VIEW

SOURCE 2 (7)

SOURCE 1 (1)

SUBSTRATE (8)

ALD1102

SUBSTRATE

GATE

SOURCE

DRAIN

Related parts for ALD1102BSAL

ALD1102BSAL Summary of contents

Page 1

... Small Outline Plastic Dip Package (SOIC) Package ALD1102ASAL ALD1102APAL ALD1102BSAL ALD1102BPAL ALD1102SAL ALD1102PAL * Contact factory for leaded (non-RoHS) or high temperature versions. Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 APPLICATIONS • Precision current mirrors • ...

Page 2

... Advanced Linear Devices 1102 Test Min Typ Max Unit Conditions -0.4 -0.7 -1 -10µ -100µ -1.3 mV/° mmho ...

Page 3

... I = -5mA +125° -10 - +125° -10 -12 Advanced Linear Devices LOW VOLTAGE OUTPUT CHARACTERISTICS -12V 25° -320 -160 0 DRAIN -SOURCE VOLTAGE (mV) TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS -20 V ...

Page 4

... V + -Vt R SET ~ = 4 R SET ALD1102, 1/2 ALD1107, or ALD1117 I SET OUT Q SET Advanced Linear Devices CURRENT SOURCE WITH GATE CONTROL ALD1102 +5V 1/2 ALD1107, or ALD1117 SET SET 1/2 ALD1101, 1/4 ALD1106, or 1/2 ALD1116 OFF Channel MOSFET Channel MOSFET ...

Page 5

... +5V R SET 1 SET SET CASCODE CURRENT SOURCES + SET SET Advanced Linear Devices P- CHANNEL CURRENT SOURCE +5V ALD1102, 1/2 ALD1107, or ALD1117 SOURCE I R SET SET Channel MOSFET +5V ...

Page 6

... S (45° (45° ALD1102A/ALD1102B/ALD1102 SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Dim D ø ø Advanced Linear Devices Millimeters Inches Min Max Min 1.75 0.053 1.35 0.25 0.004 0.10 0.45 0.014 0.35 0.25 0.007 0.18 5.00 0.185 4.69 4.05 0.140 3.50 1.27 BSC 0.050 BSC 6.30 0.224 5.70 ...

Page 7

... 3. 0. 0.20 c 9.40 D-8 5. 2.79 S-8 1.02 ø Advanced Linear Devices Millimeters Inches Max Min 5.08 0.105 1.27 0.015 2.03 0.050 1.65 0.035 0.51 0.015 0.30 0.008 11.68 0.370 7.11 0.220 8.26 0.300 2.79 0.090 7.87 0.290 3.81 0.110 2.03 0.040 0° 15° 0° Max 0.200 0.050 0.080 0.065 ...

Page 8

... CERDIP-8 PACKAGE DRAWING 8 Pin CERDIP Package Dim D Ø Advanced Linear Devices Millimeters Inches Min Max Min 5.08 0.140 3.55 2.16 0.050 1.27 1.65 0.038 0.97 0.58 0.014 0.36 0.20 0.38 0.008 -- 10.29 -- 5.59 7.87 0.220 7.73 8.26 0.290 0.100 BSC 2.54 BSC 0.300 BSC 7.62 BSC 3 ...

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