DMN65D8LDW-7 Diodes Inc. / Zetex, DMN65D8LDW-7 Datasheet - Page 2

• Manufacturer Part Number: DMN65D8LDW-7
• Description: MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
• Manufacturer: Diodes Inc. / Zetex

Specifications of DMN65D8LDW-7

• Rohs: yes

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V
Total Gate Charge V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMN65D8LDW
Document number: DS35500 Rev. 5 - 2
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
GS
Characteristic
GS
= 4.5V
= 10V
Characteristic
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
V
V
V
V
(@T
GS
GS
GS
GS
=10V
= 5V
= 10V
= 5V
A
= +25°C, unless otherwise specified.)
Symbol
R
BV
V
DS (ON)
t
t
I
C
Steady
Steady
Steady
Steady
I
V
C
GS(th)
C
Q
Q
D(on)
D(off)
g
DSS
GSS
R
Q
Q
State
State
State
State
oss
t
t
FS
SD
DSS
iss
rss
gs
gd
G
r
f
g
g
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2 of 6
Min
1.0
60
⎯
⎯
⎯
⎯
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-
Symbol
T
T
T
T
T
T
T
T
T
J,
A
A
A
A
A
A
A
A
R
R
R
P
P
T
= +25°C
= +70°C
= +25°C
= +70°C
= +25°C
= +70°C
= +25°C
= +70°C
θ JA
θ JA
θ Jc
D
D
STG
22.0
79.9
0.87
0.43
0.11
0.11
12.0
Typ
0.8
3.2
2.0
3.3
6.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3.2
Max
±5.0
1.0
2.0
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
6
Symbol
V
V
I
DSS
GSS
I
I
I
I
DM
D
D
D
D
-55 to +150
Unit
mS
µA
µA
nC
nS
pF
Ω
Ω
Ω
V
V
V
Value
300
435
400
330
139
V
V
V
V
V
V
V
V
V
V
V
I
V
R
D
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
DD
GEN
= 150mA
= 0V, I
= 60V, V
= ±20V, V
= V
= 5.0V, I
= 10.0V, I
= 10V, I
= 25V, V
= 0V, V
= 0V, I
= 10V, V
= 30V, I
= 25Ω
Value
GS
±20
180
140
150
120
200
160
170
140
800
60
, I
Test Condition
D
S
D
GS
DMN65D8LDW
D
D
= 250µA
D
GS
= 115mA
GS
DS
= 250µA
= 0.115A
DS
D
= 0.115A, V
= 0.115A
= 0V, f = 1.0MHz
= 0V
= 0.115A
= 0V, f = 1.0MHz
= 30V,
= 0V
© Diodes Incorporated
Units
°C/W
°C/W
°C/W
mW
mW
°C
Units
August 2012
mA
mA
mA
mA
mA
GEN
V
V
= 10V
,