AUIRFR4615TR International Rectifier, AUIRFR4615TR Datasheet

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AUIRFR4615TR

Manufacturer Part Number
AUIRFR4615TR
Description
MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRFR4615TR

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Continuous Drain Current
33 A
Resistance Drain-source Rds (on)
42 mOhms
Configuration
Single Quint Source
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Fall Time
20 ns
Forward Transconductance Gfs (max / Min)
35 S
Gate Charge Qg
26 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
144 W
Rise Time
35 ns
Factory Pack Quantity
2000
Typical Turn-off Delay Time
25 ns
l
l
l
l
l
l
l
Specifically designed for Automotive applications, this
HEXFET
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings
specifications is not implied.
www.irf.com
Features
Description
HEXFET
*Qualification standards can be found at http://www.irf.com/
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θJA
θJA
@ T
@ T
Advanced Process Technology
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
Low On-Resistance
C
C
C
®
= 25°C
= 100°C
= 25°C
®
is a registered trademark of International Rectifier.
Power MOSFET utilizes the latest processing
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
functional operation of the device at these or any other condition beyond those indicated in the
Parameter
Parameter
j
e
GS
GS
AUTOMOTIVE GRADE
@ 10V
@ 10V
d
i
G
Gate
G
D
S
D
See Fig. 14, 15, 22a, 22b,
Typ.
AUIRFR4615
–––
–––
–––
300(1.6mm from case)
DPak
V
R
I
AUIRFR4615
AUIRFU4615
D
-55 to + 175
DSS
DS(on)
G
Max.
0.96
± 20
140
144
109
HEXFET Power MOSFET
33
24
38
S
Drain
D
typ.
max.
D
AUIRFU4615
Max.
1.045
110
50
IPAK
G
D
S
34m
42m
Source
150V
33A
S
Units
Units
W/°C
°C/W
96398A
V/ns
mJ
mJ
°C
W
A
V
A
10/04/11
1

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AUIRFR4615TR Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance R Junction-to-Case θJC R Junction-to-Ambient (PCB Mount) θJA R Junction-to-Ambient θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE G Parameter @ 10V GS @ 10V Parameter j i ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

... Machine Model Human Body Model ESD Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage www.irf.com † ...

Page 4

VGS TOP 15V 12V 10V 100 8.0V 7.0V 6.0V 5.5V BOTTOM 5. 5.0V 0.1 ≤ 60μs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 5

175° 25°C 10 1.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 6

D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, ...

Page 7

100μA 3 250uA ID = 1.0mA 2 1.0A 2.0 1.5 1.0 -75 -50 - 100 125 150 175 Temperature ...

Page 8

... V GS 3mA I G Current Sampling Resistors Fig 24a. Gate Charge Test Circuit 8 Driver Gate Drive D.U.T. I Reverse Recovery „ Current - + D.U.T. V Re-Applied G + Voltage - Inductor Curent HEXFET Power MOSFETs 15V DRIVER + Fig 22b. Unclamped Inductive Waveforms D.U. P.W. Period ...

Page 9

www.irf.com 9 ...

Page 10

10 www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

... Ordering Information Base part Package Type AUIRFR4615 DPak AUIRFU4615 IPak 12 Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 75 Complete Part Number AUIRFR4615 AUIRFR4615TR AUIRFR4615TRL AUIRFR4615TRR AUIRFU4615 www.irf.com ...

Page 13

... Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

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