AUIRL1404STRR International Rectifier, AUIRL1404STRR Datasheet - Page 2

• Manufacturer Part Number: AUIRL1404STRR
• Description: MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
• Manufacturer: International Rectifier

Specifications of AUIRL1404STRR

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Resistance Drain-source Rds (on): 4 mOhms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Gate Charge Qg: 93.3 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 200 W
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 38 ns

V
ΔV
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
 Repetitive rating; pulse width limited by max. junction
‚ Starting T
ƒ I
„ Pulse width ≤ 300μs; duty cycle ≤ 2%.
… C
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
Notes:
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss eff.
SD
g
gs
gd
rr
(BR)DSS
2
temperature. ( See fig. 11 )
time as C
SD
(See Figure 12)
oss
≤ 95A, di/dt ≤ 160A/μs, V
eff. is a fixed capacitance that gives the same charging
/ΔT
J
oss
J
= 25°C, L = 0.35mH, R
while V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
DS
Parameter
is rising from 0 to 80% V
DD
Ù
Parameter
≤ V
G
(BR)DSS
= 25Ω, I
, T
AS
J
J
≤ 175°C
= 95A.
= 25°C (unless otherwise specified)
DSS.
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
40
93
0.038
Typ.
6600
1700
6700
1500
1500
Typ.
† Calculated continuous current based on maximum allowable
‡ This is applied to
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
270
130
350
–––
–––
–––
170
4.5
7.5
18
38
63
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
(FR-4 or G-10 Material) . For recommended footprint and
soldering techniques refer to application note #AN-994.
160
Max. Units
Max. Units
-200
–––
–––
250
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
–––
–––
–––
–––
640
250
4.0
5.9
3.0
1.3
20
48
60
94
h
V/°C
mΩ
μA
nA
nC
nH
pF
nC
ns
ns
V
V
S
A
V
D
2
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig.5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
Pak
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
GS
GS
GS
J
J
G
D
= 95A
= 95A
= 25°C, I
= 25°C, I
= 2.5Ω,V
= 0.25Ω
= V
= 25V, I
= 40V, V
= 32V, V
= 32V
= 20V
= 25V
= 0V, I
= 10V, I
= 4.3V, I
= 20V
= -20V
= 5.0V,See Fig 6
= 0V
= 0V, V
= 0V, V
= 0V, V
, When mounted on 1" square PCB
GS
, I
D
Ãf
D
DS
DS
DS
S
F
D
D
GS
= 250μA
D
GS
GS
= 250μA
= 95A, V
= 95A
= 95A
= 95A
= 40A
= 1.0V, ƒ =1.0MHz
= 32V, ƒ =1.0MHz
= 0V to 32V
= 4.5V
= 0V
= 0V, T
f
Conditions
Conditions
D
f
f
= 1mA
f
GS
J
= 150°C
= 0V
G
www.irf.com
G
f
S
D
D
S