ECH8420-TL-H ON Semiconductor, ECH8420-TL-H Datasheet - Page 2

• Manufacturer Part Number: ECH8420-TL-H
• Description: MOSFET NCH 1.8V DRIVE SERIES
• Manufacturer: ON Semiconductor

Specifications of ECH8420-TL-H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 14 A
• Resistance Drain-source Rds (on): 6.8 mOhms
• Mounting Style: SMD/SMT
• Package / Case: ECH-8
• Power Dissipation: 1.6 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
ECH8420-TL-H
P.G
4.5V
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
G
50Ω
V DD =10V
D
S
I D =7A
R L =1.43Ω
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
ECH8420
Symbol
Package
V OUT
ECH8
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GS =±8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =7A
I D =7A, V GS =4.5V
I D =4A, V GS =2.5V
I D =2A, V GS =1.8V
V DS =10V, f=1MHz
See specifi ed Test Circuit.
V DS =10V, V GS =4.5V, I D =14A
I S =14A, V GS =0V
ECH8420
Conditions
3,000pcs./reel
Shipping
min
Pb Free and Halogen Free
0.4
20
Ratings
typ
memo
2430
14.5
0.75
410
330
210
115
5.2
4.8
8.7
15
21
88
29
8
max
11.5
22.5
±10
1.3
6.8
1.2
1
No.8993-2/7
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V