AUIRFS3004-7PTR International Rectifier, AUIRFS3004-7PTR Datasheet

AUIRFS3004-7PTR

Manufacturer Part Number

AUIRFS3004-7PTR

Description

MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET

Manufacturer

International Rectifier

Datasheet

1.AUIRFS3004-7PTR.pdf (12 pages)

Specifications of AUIRFS3004-7PTR

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

40 V

Continuous Drain Current

400 A

Resistance Drain-source Rds (on)

1.25 mOhms

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

D2PAK-7

Power Dissipation

380 W

Factory Pack Quantity

800

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Features

●

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications such as

Electric Power Steering, Battery Switch, SMPS and other

heavy loads.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T

dv/dt

Thermal Resistance

STG

JC

JA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

Symbol

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Parameter

AUTOMOTIVE GRADE

@ 10V (Silicon Limited)

@ 10V (Wire Bond Limited)

) is 25°C, unless otherwise specified.

Gate

AUIRFS3004-7P

See Fig. 14, 15, 22a, 22b

Typ.

–––

DSS

DS(on)

(Silicon Limited)

(Package Limited)

-55 to + 175

Drain

400

280

HEXFET Power MOSFET

Max.

1610

240

380

± 20

290

300

2.5

2.0

™

typ.

max.

Max.

0.40

Source

0.90m

1.25m

400A

240A

40V

Units

W/°C

°C/W

V/ns

°C

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