AUIRFS3004-7PTL International Rectifier, AUIRFS3004-7PTL Datasheet

AUIRFS3004-7PTL

Manufacturer Part Number

AUIRFS3004-7PTL

Description

MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET

Manufacturer

International Rectifier

Datasheet

1.AUIRFS3004-7PTR.pdf (12 pages)

Specifications of AUIRFS3004-7PTL

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

40 V

Continuous Drain Current

400 A

Resistance Drain-source Rds (on)

1.25 mOhms

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

D2PAK-7

Power Dissipation

380 W

Factory Pack Quantity

800

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Features

●

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications such as

Electric Power Steering, Battery Switch, SMPS and other

heavy loads.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T

dv/dt

Thermal Resistance

STG

JC

JA

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

Symbol

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Parameter

AUTOMOTIVE GRADE

@ 10V (Silicon Limited)

@ 10V (Wire Bond Limited)

) is 25°C, unless otherwise specified.

Gate

AUIRFS3004-7P

See Fig. 14, 15, 22a, 22b

Typ.

–––

DSS

DS(on)

(Silicon Limited)

(Package Limited)

-55 to + 175

Drain

400

280

HEXFET Power MOSFET

Max.

1610

240

380

± 20

290

300

2.5

2.0

™

typ.

max.

Max.

0.40

Source

0.90m

1.25m

400A

240A

40V

Units

W/°C

°C/W

V/ns

°C

Related parts for AUIRFS3004-7PTL

AUIRFS3004-7PTL Summary of contents

Page 1

... AUTOMOTIVE GRADE G Gate ) is 25°C, unless otherwise specified. A Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Wire Bond Limited Ã f Parameter kl j AUIRFS3004-7P HEXFET Power MOSFET D V DSS R typ. DS(on) max (Silicon Limited (Package Limited ...

Page 2

Static Electrical Characteristics @ T Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS V /T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance R Internal Gate Resistance G I Drain-to-Source ...

Page 3

Qualification Information Qualification Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher ...

Page 4

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° ...

Page 5

175°C 100 25° 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 420 360 Limited By Package 300 240 180 120 60 0 ...

Page 6

D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 0.01 100 0.05 0.10 10 Allowed ...

Page 7

250μ 1.0mA 2 1.0A 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ( °C ) Fig ...

Page 8

... V GS 3mA I G Current Sampling Resistors Fig 24a. Gate Charge Test Circuit 8 Driver Gate Drive D.U.T. I Reverse Recovery „ Current - + D.U.T. V Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs 15V DRIVER + Fig 22b. Unclamped Inductive Waveforms D.U. P.W. Period ...

Page 9

D Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) www.irf.com 9 ...

Page 10

D Pak - 7 Pin Part Marking Information 2 D Pak - 7 Pin Tape and Reel 10 www.irf.com ...

Page 11

... Ordering Information Base part number Package Type AUIRFS3004-7P D2Pak 7 Pin www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRFS3004-7P AUIRFS3004-7TRL AUIRFS3004-7TRR 11 ...

Page 12

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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