DMP3028LFDE-7 Diodes Inc., DMP3028LFDE-7 Datasheet - Page 2

• Manufacturer Part Number: DMP3028LFDE-7
• Description: MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A
• Manufacturer: Diodes Inc.

Specifications of DMP3028LFDE-7

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 5.3 A
• Resistance Drain-source Rds (on): 60 mOhms
• Configuration: Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UDFN2020-6
• Fall Time: 40.4 ns
• Gate Charge Qg: 10.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.66 W
• Rise Time: 17.1 ns
• Typical Turn-off Delay Time: 60.5 ns

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMP3028LFDE
Document number: DS35965 Rev. 5 - 2
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Characteristic
GS
GS
= 10V)
= 4.5V)
(@T
A
Characteristic
= +25°C, unless otherwise specified.)
GS
Characteristic
(@T
= 10V
(@T
A
= +25°C, unless otherwise specified.)
A
= +25°C, unless otherwise specified.)
Symbol
R
BV
V
DS (ON)
t
t
C
I
I
|Y
V
C
C
Q
D(on)
D(off)
GS(th)
Q
GSS
R
DSS
Q
Q
Steady
t
SD
oss
t
DSS
iss
rss
t<10s
gd
State
fs
gs
r
f
G
g
g
|
www.diodes.com
Min
-30


















-1
2 of 6
T
T
T
T
A
A
A
A
= +25°C
= +70°C
= +25°C
= +70°C
Steady state
Steady state
T
T
T
T
1241
10.9
17.1
60.5
40.4
Typ
147
110
4.5
0.7
3.5
4.7
9.7
A
A
A
A
20
29
15
22




t<10s
t<10s
= +25°C
= +70°C
= +25°C
= +70°C
100
Max
-2.4
1.2

25
38













-1
Symbol
V
V
I
GSS
DSS
I
I
I
DM
D
D
S
Symbol
T
J,
R
R
R
P
P
Unit
T
m
 JA
 JA
 JC
A
nC
nA
pF
nS
D
D
V
V
S
V

STG
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
I
D
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
DS
GS
= -7A
= -5V, I
Value
= -30V, V
= V
= -15V, V
= 0V, V
= -15V, I
= 0V, I
= 20V, V
= -10V, I
= -4.5V, I
= 0V, I
= -10V, V
±20
-6.8
-5.3
-8.2
-6.6
-2.5
-55 to +150
-30
-40
GS
Value
0.66
0.42
2.03
189
125
1.3
9.3
61
41
, I
Test Condition
DMP3028LFDE
D
S
D
GS
D
= -250A
= -2.1A
D
D
= -7A
GS
D
GS
= -250A
DD
DS
= -7A
= -7A
= 0V, f = 1.0MHz
= -6.2A
= 0V
= 0V
= -15V, R
= 0V
© Diodes Incorporated
Units
March 2013
Units
°C/W
°C/W
GEN
V
V
A
A
A
A
°C
W
W
= 6,