VP2106N3-P002-G Supertex, VP2106N3-P002-G Datasheet - Page 3

• Manufacturer Part Number: VP2106N3-P002-G
• Description: MOSFET 60V 12Ohm
• Manufacturer: Supertex

Specifications of VP2106N3-P002-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 0.25 A
• Resistance Drain-source Rds (on): 12 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-92
• Power Dissipation: 0.74 W
• Factory Pack Quantity: 2000

Typical Performance Curves
-0.001
-0.01
-2.0
-1.6
-1.2
-0.8
-0.4
250
200
150
100
-1.0
-0.1
50
0
0
-0.1
0
0
T
Maximum Rated Safe Operating Area
A
Transconductance vs. Drain Current
V DS = 25V
= 25°C
TO-92 (pulsed)
TO-92 (DC)
-0.2
-10
Output Characteristics
-1.0
I
D
-0.4
V
-20
V
(amperes)
DS
DS
●
(volts)
(volts)
1235 Bordeaux Drive, Sunnyvale, CA 94089
-0.6
-30
-10
V GS = -10V
T
T
T
A
A
A
= -55°C
-0.8
-40
= 25°C
= 125°C
-9V
-8V
-7V
-6V
-5V
-4V
-100
-1.0
-50
3
-1.0
-0.8
-0.6
-0.4
-0.2
1.0
0.5
1.0
0.8
0.6
0.4
0.2
●
-0
0
0
0.001
Power Dissipation vs. Ambient Temperature
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0
0
TO-92
Thermal Response Characteristics
25
-2
Saturation Characteristics
0.01
50
V
-4
t
p
DS
T
●
(seconds)
A
0.1
75
(volts)
www.supertex.com
(°C)
-6
100
V GS = -10V
TO-92
P
T
1.0
A
D
-8
= 25°C
= 1.0W
125
-7V
-6V
-5V
-4V
-3V
-8V
-9V
VP2106
150
-10
10