SI4825DY-E3 Vishay/Siliconix, SI4825DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4825DY-E3
• Description: MOSFET 30V 11.5A 3W
• Manufacturer: Vishay/Siliconix

Specifications of SI4825DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 8.1 A
• Resistance Drain-source Rds (on): 14 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 13 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 13 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 97 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71291
S09-0868-Rev. D, 18-May-09
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 11.5 A
0.2
On-Resistance vs. Drain Current
= 15 V
12
10
V
T
V
Q
GS
J
SD
g
= 150 °C
- Total Gate Charge (nC)
= 4.5 V
0.4
- Source-to-Drain Voltage (V)
I
D
Gate Charge
20
24
- Drain Current (A)
0.6
30
36
0.8
V
GS
T
= 10 V
48
40
J
= 25 °C
1.0
1.2
50
60
5000
4000
3000
2000
1000
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
D
- 25
GS
= 11.5 A
= 10 V
6
2
V
V
DS
T
GS
C
0
J
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
Capacitance
25
12
4
I
D
= 11.5 A
50
Vishay Siliconix
C
18
iss
6
75
Si4825DY
www.vishay.com
100
24
8
125
150
30
10
3