VN1206L-P014-G Supertex, VN1206L-P014-G Datasheet
VN1206L-P014-G
Manufacturer Part Number
VN1206L-P014-G
Description
MOSFET 120V 6Ohm
Manufacturer
Supertex
Datasheet
1.VN1206L-P014-G.pdf
(3 pages)
Specifications of VN1206L-P014-G
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
120 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.23 A
Resistance Drain-source Rds (on)
6 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
18 ns
Features
►
►
►
►
►
►
►
Applications
►
►
►
►
►
►
Ordering Information
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Distance of 1.6mm from case for 10 seconds.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
VN1206
Device
ISS
and fast switching speeds
Package Option
VN1206L-G
TO-92
●
N-Channel Enhancement-Mode
Vertical DMOS FET
1235 Bordeaux Drive, Sunnyvale, CA 94089
-55
O
C to +150
300
Value
BV
BV
±30V
DGS
DSS
O
O
C
C
BV
DSS
120
(V)
Pin Configuration
Product Marking
Package may or may not include the following marks: Si or
/BV
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
DGS
Si V N
YYWW
1 2 0 6 L
●
Tel: 408-222-8888
SOURCE
R
(max)
YY = Year Sealed
WW = Week Sealed
DS(ON)
6.0
(Ω)
TO-92 (L)
TO-92 (L)
●
= “Green” Packaging
www.supertex.com
DRAIN
GATE
VN1206
I
(min)
D(ON)
1.0
(A)
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VN1206L-P014-G Summary of contents
Page 1
... Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Option Device TO-92 VN1206 VN1206L-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature ...
Page 2
... mmho V = 10V 500mA DS D 125 25V 1.0MHz 20 8 60V, 8 400mA 25Ω GEN 0V 250mA PULSE GENERATOR OUTPUT R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com VN1206 I † DR DRM (A) 2 10V ...
Page 3
... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...