VP0104N3-P014-G Supertex, VP0104N3-P014-G Datasheet - Page 4

• Manufacturer Part Number: VP0104N3-P014-G
• Description: MOSFET 40V 8Ohm
• Manufacturer: Supertex

Specifications of VP0104N3-P014-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 0.25 A
• Resistance Drain-source Rds (on): 8 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-92
• Power Dissipation: 1 W
• Factory Pack Quantity: 2000

Typical Performance Curves
1.10
1.06
1.02
0.98
0.94
0.90
-1.0
-0.8
-0.6
-0.4
-0.2
100
75
50
25
Capacitance vs. Drain-to-Source Voltage
0
0
-50
0
Supertex inc.
0
f = 1MHz
BV
V
DSS
DS
-2
Transfer Characteristics
= -25V
Variation with Temperature
-10
0
-4
V
V
GS
DS
T
T
j
-20
A
(volts)
(volts)
50
(
O
= 25
T
C)
A
-6
= -55
O
C
1235 Bordeaux Drive, Sunnyvale, CA 94089
O
T
-30
100
C
A
= 125
-8
C
C
C
(cont.)
RSS
OSS
ISS
O
C
-10
-40
150
4
-1.6
-1.4
-1.2
-1.0
-0.8
-10
0.6
50
40
30
20
10
-8
-6
-4
-2
0
0
-50
V
0
0
(th)
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
Tel: [phone]
and R
45pf
-0.3
0.2
V
GS
DS
0
= -5.0V
Q
Variation with Temperature
R
G
R
DS(ON)
V
70pf
-0.6
(nanocoulombs)
DS(ON)
0.4
DS
I
D
T
= -10V
(amperes)
@ -5V, -0.1A
j
(
@ 10V, -0.5A
50
O
V
C)
V
70pf
-0.9
GS
(th)
0.6
www.supertex.com
= -10V
@ -1.0mA
V
DS
100
= -40V
-1.2
0.8
-1.5
150
1.0
VP0104
-1.6
-1.4
-1.2
-1.0
-0.8