FDMC6675BZ_F127 Fairchild Semiconductor, FDMC6675BZ_F127 Datasheet - Page 5

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FDMC6675BZ_F127

Manufacturer Part Number
FDMC6675BZ_F127
Description
MOSFET -30V P-CH PwrTrench
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMC6675BZ_F127

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Continuous Drain Current
- 9.5 A
Resistance Drain-source Rds (on)
14.4 mOhms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MLP 3.3 x 3.3
Minimum Operating Temperature
- 55 C
Power Dissipation
36 W
©2010 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D3
Typical Characteristics
1000
0.001
100
0.01
0.3
10
0.1
10
1
2
1
10
-3
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 14.
10
10
-2
Figure 13. Single Pulse Maximum
-2
T
Junction-to-Ambient Transient Thermal Response Curve
J
= 25 °C unless otherwise noted
V
GS
SINGLE PULSE
R
T
JA
= -10 V
= 125
10
10
-1
o
-1
t, RECTANGULAR PULSE DURATION (sec)
C/W
t, PULSE WIDTH (sec)
5
1
1
Power Dissipation
10
10
NOTES:
DUTY FACTOR: D = t
PEAK T
SINGLE PULSE
R
T
A
T
J
JA
= 25
= P
= 125
DM
o
C
x Z
o
C/W
P
TJA
100
DM
100
1
/t
x R
2
TJA
t
1
+ T
t
2
A
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1000
1000

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