SiHB30N60E-E3 Vishay/Siliconix, SiHB30N60E-E3 Datasheet - Page 8
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SiHB30N60E-E3
Manufacturer Part Number
SiHB30N60E-E3
Description
MOSFET N-Channel 600V
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHB30N60E-GE3.pdf
(9 pages)
Specifications of SiHB30N60E-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
29 A
Resistance Drain-source Rds (on)
125 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK-3
Forward Transconductance Gfs (max / Min)
5.4 S
Gate Charge Qg
85 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
250 W
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D
PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
www.vishay.com
1
11-Apr-05