TP2635N3-P014-G Supertex, TP2635N3-P014-G Datasheet - Page 4
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TP2635N3-P014-G
Manufacturer Part Number
TP2635N3-P014-G
Description
MOSFET 350V 15Ohm
Manufacturer
Supertex
Datasheet
1.TP2640LG-G.pdf
(5 pages)
Specifications of TP2635N3-P014-G
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 350 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 180 mA
Resistance Drain-source Rds (on)
15 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
60 ns
Typical Performance Curves (cont.)
400
300
200
100
-2.0
-1.6
-1.2
-0.8
-0.4
1.1
1.0
0.9
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
DSS
-2
Transfer Characteristics
-10
0
Variation with Temperature
V
V
-4
GS
DS
T
(volts)
j
50
-20
(volts)
° (
C)
f = 1MHz
●
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8
C
C
ISS
RSS
150
-10
-40
4
1.2
1.0
0.8
0.6
0.4
-10
30
24
18
12
-8
-6
-4
-2
6
0
0
-50
0
0
V
●
TH
Tel: 408-222-8888
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
263pF
V
-0.4
GS
1
0
DS
= -2.5V
Q (nanocoulombs)
G
I
Variation with Temperature
D
-0.8
(amperes)
2
V
T
(th)
R
j
50
DS(ON)
V
° (
●
V
DS
@ -1mA
C)
GS
-1.2
www.supertex.com
= -10V
3
= -4.5V
@ -10V, -0.3A
V
100
GS
V
DS
-1.6
4
= -10V
678pF
= -40V
-2.0
150
5
TP2635
2.5
2.0
1.5
1.0
0.5
0