23K256-E/P Microchip Technology, 23K256-E/P Datasheet - Page 11

• Manufacturer Part Number: 23K256-E/P
• Description: IC SRAM 256KBIT 20MHZ 8DIP
• Manufacturer: Microchip Technology
• Type: Synchronousr

Specifications of 23K256-E/P

• Memory Size: 256K (32K x 8)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 20MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Access Time: 32 ns
• Maximum Clock Frequency: 20 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 10 mA
• Organization: 32 K x 8
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2.6
The Write Status Register instruction (WRSR) allows the
user to write to the bits in the STATUS register as
shown in Table 2-2. This allows for setting of the Device
operating mode. Several of the bits in the STATUS
register must be cleared to ‘0’. See Figure 2-8 for the
WRSR timing sequence.
FIGURE 2-8:
2.7
The 23X256 powers on in the following state:
• The device is in low-power Standby mode
• A high-to-low-level transition on CS is required to
© 2009 Microchip Technology Inc.
SCK
(CS = 1)
enter active state
SO
CS
SI
Write Status Register Instruction
(WRSR)
Power-On State
0
0
WRITE STATUS REGISTER TIMING SEQUENCE (WRSR)
0
1
0
Instruction
2
0
3
0
4
0
5
High-Impedance
Preliminary
0
6
1
7
7
8
6
9
Data to STATUS Register
10
5
23A256/23K256
11
4
12
3
13
2
14
1
DS22100C-page 11
15
0