VP0109N3-P014-G Supertex, VP0109N3-P014-G Datasheet

VP0109N3-P014-G

Manufacturer Part Number

VP0109N3-P014-G

Description

MOSFET 90V 8Ohm

Manufacturer

Supertex

Datasheet

1.VP0104N3-P014-G.pdf (5 pages)

Specifications of VP0109N3-P014-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 90 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

- 0.25 A

Resistance Drain-source Rds (on)

8 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Typical Turn-off Delay Time

8 ns

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Features

►

Applications

►

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the

device may occur. Functional operation under these conditions is not implied.

Continuous operation of the device at the absolute rating level may affect

device reliability. All voltages are referenced to device ground.

Supertex inc.

Product Summary

Ordering Information

For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specification VF15 for layout and dimensions.

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

VP0104N3-G

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

VP0104

Device

memories, displays, bipolar transistors, etc.)

Device

ISS

Supertex inc.

and fast switching speeds

VP0104N3-G

DSS

Package

-40

TO-92

(V)

/BV

DGS

P-Channel Enhancement-Mode

Vertical DMOS FETs

1235 Bordeaux Drive, Sunnyvale, CA 94089

(max)

DS(ON)

8.0

(Ω)

-55°C to +150°C

(Die in wafer form)

VP1504NW

-500

(min)

(mA)

D(ON)

Value

±20V

DGS

DSS

General Description

The Supertex VP0104 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors, and the high input impedance

and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from

thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Pin Configuration

Product Marking

Package may or may not include the following marks: Si or

Wafer / Die Options

Y Y W W

0 1 0 4

(Die on adhesive tape)

SiVP

Tel: 408-222-8888

VP1504NJ

YY = Year Sealed

WW = Week Sealed

SOURCE

TO-92 (N3)

= “Green” Packaging

www.supertex.com

DRAIN

GATE

(Die in waffle pack)

VP1504ND

VP0104

Related parts for VP0109N3-P014-G

VP0109N3-P014-G Summary of contents

Page 1

... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...

Page 2

... Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V t (ON) t d(ON) 0V OUTPUT 10% VDD Supertex inc. I Power Dissipation D † (pulsed (mA) (W) -800 1 25°C unless otherwise specified) A Min ...

Page 3

... V (volts) DS Transconductance vs. Drain Current 250 V = -25V DS 200 150 100 -0.2 -0.4 -0.6 I (amperes) D Maximum Rated Safe Operating Area -10 -1.0 TO-92 (DC) -0 -0.01 -0.1 -1.0 V (volts) DS Supertex inc. -1.0 -0 -10V -0.6 GS -9V -8V -0.4 -7V -6V -0.2 -5V -4V -30 - 125 1.0 -0.8 -1.0 1.0 0.8 0.6 0.4 0.2 -10 -100 ...

Page 4

... DS -0 -0.6 -0.4 -0 (volts) GS Capacitance vs. Drain-to-Source Voltage 100 f = 1MHz -10 -20 V (volts) DS Supertex inc. (cont.) 100 150 = - 125 -10 C ISS C OSS C RSS -30 -40 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current ...

Page 5

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing (s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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