SUM60N04-12LT-E3 Vishay/Siliconix, SUM60N04-12LT-E3 Datasheet - Page 2

• Manufacturer Part Number: SUM60N04-12LT-E3
• Description: MOSFET 40V 60A 110W
• Manufacturer: Vishay/Siliconix

Specifications of SUM60N04-12LT-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK-5
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 70 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 35 ns

SUM60N04-12LT
Vishay Siliconix
Notes:
a. Package limited.
b. Duty Cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB FR4.
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current (T
Avalanche Current
Repetitive Avalanche Energy
Source-to-Anode Voltage
Source-to-Cathode Voltage
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
GS
Clamp Current
d
J
a
= 175 °C)
A
= 25 °C, unless otherwise noted
T
T
L = 0.1 mH
T
T
C
A
C
C
= 100 °C
= 25 °C
= 25 °C
= 25 °C
d
Symbol
Symbol
T
R
J
R
V
V
E
V
V
I
P
, T
I
I
AR
thJC
GS
thJA
DS
G
AR
SA
SC
D
D
stg
- 55 to 175
Limit
Limit
± 20
3.75
1.35
60
125
100
100
110
40
50
50
50
40
a
S-80272-Rev. C, 11-Feb-08
Document Number: 71620
°C/W
Unit
Unit
mA
mJ
°C
W
V
A
V