TN0104N3-P013-G Supertex, TN0104N3-P013-G Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/6/642/supertex_sml.jpg)
TN0104N3-P013-G
Manufacturer Part Number
TN0104N3-P013-G
Description
MOSFET 40V 1.8Ohm
Manufacturer
Supertex
Datasheet
1.TN0104N3-P002-G.pdf
(7 pages)
Specifications of TN0104N3-P013-G
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.4 A
Resistance Drain-source Rds (on)
1.8 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
6 ns
Typical Performance Curves
100
1.3
1.2
1.1
1.0
0.9
0.8
3.0
2.4
1.8
1.2
0.6
75
50
25
0
Capacitance vs. Drain-to-Source Voltage
0
-50
0
0
Supertex inc.
BV
V
DS
= 25V
DSS
Transfer Characteristics
2
Variation with Temperature
10
0
4
V
V
GS
T
DS
j
(
(volts)
(volts)
50
20
O
C)
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
30
8
f = 1MHz
C
C
(cont.)
ISS
RSS
150
40
10
5
1.4
1.2
1.0
0.8
0.6
0.4
10
10
8
6
4
2
0
8
6
4
2
0
-50
V
0.50
0
(th)
Gate Drive Dynamic Characteristics
V
Tel: 408-222-8888
and R
(th)
On-Resistance vs. Drain Current
@ 0.5mA
0.65
V
DS
0
GS
50pF
Variation with Temperature
Q
= 5.0V
G
I
0.80
(nanocoulombs)
D
(amperes)
T
j
(
50
1
O
C)
55pF
R
V
www.supertex.com
DS(ON)
DS
0.95
= 10V
@ 5.0V, 0.25A
V
GS
40V
100
= 10V
1.10
1.25
150
TN0104
2
1.4
1.2
1.0
0.8
0.6
0.4