SI4430DY-E3 Vishay/Siliconix, SI4430DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4430DY-E3
• Description: MOSFET 30V 23A 3.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4430DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Resistance Drain-source Rds (on): 4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 15 ns
• Factory Pack Quantity: 100
• Typical Turn-off Delay Time: 105 ns

Si4430DY
Vishay Siliconix
www.vishay.com
2-4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Single Pulse
T
Threshold Voltage
I
D
J
= 250 mA
- Temperature (_C)
25
10
-3
50
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
New Product
-2
10
-1
10
1
-1
60
50
40
30
20
10
0
10
-2
10
10
-1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
- T
t
1
A
Time (sec)
1
1
= P
t
2
DM
Z
thJA
thJA
100
t
t
S-03662—Rev. C, 14-Apr-03
1
2
(t)
Document Number: 70852
10
= 67_C/W
100
600
10
600