SST25VF016B-50-4I-QAF-T Microchip Technology, SST25VF016B-50-4I-QAF-T Datasheet - Page 15

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SST25VF016B-50-4I-QAF-T

Manufacturer Part Number
SST25VF016B-50-4I-QAF-T
Description
IC FLASH SER 16M 50MHZ SPI 8WSON
Manufacturer
Microchip Technology

Specifications of SST25VF016B-50-4I-QAF-T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
50MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
4-KByte Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase
instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-
Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any com-
mand sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, fol-
lowed by address bits [A
determine the sector address (SA
before the instruction is executed. The user may poll the Busy bit in the software status register or wait
T
Erase sequence.
Figure 12:Sector-Erase Sequence
SE
for the completion of the internal self-timed Sector-Erase cycle. See Figure 12 for the Sector-
SCK
CE#
SO
SI
23
-A
MODE 3
MODE 0
0
]. Address bits [A
X
), remaining address bits can be V
MSB
0 1 2 3 4 5 6 7 8
15
20
HIGH IMPEDANCE
MS
-A
12
MSB
] (A
ADD.
16 Mbit SPI Serial Flash
MS
15 16
= Most Significant address) are used to
ADD.
23 24
IL
1271 SecErase.0
or V
ADD.
IH.
31
CE# must be driven high
SST25VF016B
S71271-04-000
Data Sheet
01/11

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