VS-VSKH56/08 Vishay Semiconductors, VS-VSKH56/08 Datasheet - Page 3

• Manufacturer Part Number: VS-VSKH56/08
• Description: SCR Modules 800 Volt 60 Amp 890 Amp IFSM
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKH56/08

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 135 A
• Non Repetitive On-state Current: 1200 A
• Breakover Current Ibo Max: 1256 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• On-state Voltage: 1.7 V
• Holding Current (ih Max): 200 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: ADD-A-PAK
• Circuit Type: Thyristors / Diodes
• Current Rating: 60 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 10

Note
• Table shows the increment of thermal resistance R
Document Number: 94630
Revision: 17-May-10
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at V
Maximum RMS insulation voltage
Maximum critical rate of rise of off-state voltage
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
ΔR CONDUCTION PER JUNCTION
DEVICES
VSK.41..
VSK.56..
0.110
0.088
180°
RRM
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
, V
DRM
SINE HALF WAVE CONDUCTION
[e-mail], [e-mail],
ADD-A-PAK Generation VII Power Modules
For technical questions within your region, please contact one of the following:
0.131
0.104
120°
to heatsink
busbar
0.134
0.17
90°
SYMBOL
SYMBOL
SYMBOL
T
P
- V
dV/dt
R
R
P
J
V
V
I
I
I
I
V
G(AV)
I
RRM,
GM
DRM
, T
0.184
thJC
GT
GD
GM
thJC
thCS
GD
GT
0.23
INS
GM
60°
Stg
when devices operate at different conduction angles than DC
T
T
T
T
T
T
T
T
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
JEDEC
T
50 Hz
T
J
J
J
J
J
J
J
J
J
J
0.273
0.342
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= 125 °C, rated V
= 125 °C, rated V
= 125 °C, gate open circuit
= 125 °C, linear to 0.67 V
30°
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
0.085
180°
0.07
RECTANGULAR WAVE CONDUCTION
DRM
DRM
[e-mail]
applied
applied
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
0.138
0.111
120°
VSK.41.., VSK.56.. Series
DRM
0.177
0.143
Vishay Semiconductors
90°
0.235
0.189
VSK.41
60°
VSK.41 VSK.56
VSK.41 VSK.56
0.44
TO-240AA compatible
3000 (1 min)
- 40 to 125
3600 (1 s)
0.25
1000
270
150
2.5
2.5
4.0
2.5
1.7
10
10
80
0.1
2.7
15
75
6
4
3
VSK.56
0.345
0.275
30°
0.35
www.vishay.com
UNITS
UNITS
UNITS
UNITS
°C/W
°C/W
V/μs
mA
mA
mA
Nm
oz.
°C
W
A
V
V
V
g
3