VS-22RIA60 Vishay Semiconductors, VS-22RIA60 Datasheet - Page 6

• Manufacturer Part Number: VS-22RIA60
• Description: SCRs 600 Volt 22 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-22RIA60

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 420 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 10 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 130 mA
• Mounting Style: Stud
• Package / Case: TO-48
• Factory Pack Quantity: 100

22RIA Series
Vishay Semiconductors
www.vishay.com
6
0.01
100
0.1
0.1
10
0.001
0.001
1
1
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
VGD
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
<=30% rated di/dt : 10V, 65ohms
tr<=1 µs, tp >= 6 µs
Steady State Value
R
(DC Operation)
thJC
IGD
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= 0.86 K/W
1000
100
0.01
Fig. 8 - Thermal Impedance Z
10
1
Fig. 7 - Forward Voltage Drop Characteristics
0.5
0.01
Medium Power Thyristors
Instantaneous On-state Voltage (V)
(Stud Version), 22 A
Fig. 9 - Gate Characteristics
Instantaneous Gate Current (A)
Square Wave Pulse Duration (s)
1
(b)
0.1
1.5
T = 25°C
T = 125°C
J
J
(a)
22RIA Series Frequency Limited by PG(AV)
0.1
22RIA Series
2
thJC
22RIA Series
1
Characteristics
2.5
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
1
3
10
(1)
(2)
(3)
(4)
100
10
Document Number: 93700
Revision: 19-Sep-08